FAIRCHILD MMBD1403

MMBD1401 / 1403 / 1404 / 1405
CONNECTION DIAGRAMS
3
3
1401
3
1403
29
3
1
2 NC
1
2
1
2
3
3
1404
1405
2
SOT-23
MARKING
MMBD1401 29
MMBD1404
MMBD1403 32
MMBD1405
1
33
34
1
2
1
2
High Voltage General Purpose Diode
Sourced from Process 1H.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
W IV
Working Inverse Voltage
175
V
IO
Average Rectified Current
200
mA
IF
DC Forward Current
600
mA
if
Recurrent Peak Forward Current
700
mA
if(surge)
Tstg
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
1.0
2.0
-55 to +150
A
A
°C
TJ
Operating Junction Temperature
150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
Units
MMBD1401/1403/1404/1405*
350
2.8
357
mW
mW/°C
°C/W
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
ã 1997 Fairchild Semiconductor Corporation
MMBD1401 / 1403 / 1404 / 1405
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
BV
Breakdown Voltage
IR = 100 µA
IR
Reverse Current
VF
Forward Voltage
VR = 120 V
VR = 175 V
IF = 10 mA
IF = 50 mA
IF = 200 mA
IF = 300 mA
VR = 0, f = 1.0 MHz
CO
Diode Capacitance
TRR
Reverse Recovery Time
Min
Max
Units
200
760
IF = IR = 30 mA,
IRR = 1.0 mA, RL = 100Ω
V
40
100
800
920
1.0
1.1
2.0
nA
nA
mV
mV
V
V
pF
50
nS
Typical Characteristics
Ta= 25°C
300
3
5
10
20
30
50
I R - REVERSE CURRENT (uA)
50
Ta= 25°C
40
30
20
10
0
55
100
75
95
115 135 155 175 195
V R - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 180 to 255 V
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
V
VFF - FORWARD VOLTAGE (mV)
275
IR - REVERSE CURRENT (nA)
325
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 55 to 205 V
IIRR - REVERSE CURRENT (nA)
VVRR - REVERSE VOLTAGE (V)
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
100
90
Ta= 25°C
80
70
60
50
40
30
20
180
200
220
240
VR - REVERSE VOLTAGE (V)
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten Degree C increase in Temperature
255
Ta= 25°C
450
400
350
300
250
1
2
3
5
10
20 30
50
IF - FORWARD CURRENT (uA)
100
MMBD1401 / 1403 / 1404 / 1405
High Voltage General Purpoise Diode
(continued)
Typical Characteristics
(continued)
VVFF - FORWARD VOLTAGE (mV)
725
Ta= 25°C
700
650
600
550
500
450
0.1
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 to 800 mA
0.2 0.3 0.5
1
2
3
5
I F - FORWARD CURRENT (mA)
10
1.4
Ta= 25°C
1.3
1.2
1.1
1
0.9
0.8
0.7
10
20
30
50
100
200 300
IF - FORWARD CURRENT (mA)
500
800
Forward Voltage vs Ambient Temperature
VF - 1.0 uA - 10 mA (-40 to + 80 Deg C)
CAPACITANCE vs REVERSE VOLTAGE
VR - 0 to 15 V
VVFF - FORWARD VOLTAGE (mV)
VVF F - FORWARD VOLTAGE (mV)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
1.3
Ta= 25°C
CAPACITANCE (pF)
800
Ta= -40°C
600
Ta= 25°C
400
Ta= +80°C
1.2
1.1
1
0.9
200
0.8
0.001 0.003 0.01 0.03 0.1 0.3
1
I F - FORWARD CURRENT (mA)
3
10
0
50
I - CURRENT (mA)
500
40
30
20
IF = IR = 30 mA
Rloop = 100 Ohms
1
1.5
2
2.5
Irr - REVERSE RECOVERY CURRENT (mA)
3
4
6
8
10
REVERSE VOLTAGE (V)
12
14 15
Average Rectified Current (Io) &
Forward Current (I F) versus
Ambient Temperature (T A)
REVERSE RECOVERY TIME vs
REVERSE RECOVERY CURRENT (Irr)
REVERSE RECOVERY (nS)
2
IR
400
300
CU
RR
EN
TS
TE
AD
Y
Io - A
ST
VER
AT
AGE
E
REC
-m
TIFIE
D CU
A
RRE
NT mA
200
100
0
-F
OR
WA
RD
0
50
100
150
o
TA - AMBIENT TEMPERATURE ( C)
MMBD1401 / 1403 / 1404 / 1405
High Voltage General Purpoise Diode
(continued)
Typical Characteristics
(continued)
POWER DERATING CURVE
PD - POWER DISSIPATION (mW)
500
400
DO-35 Pkg
300
SOT-23 Pkg
200
100
0
0
50
100
150
IO - AVERAGE TEMPERATURE ( oC)
200
MMBD1401 / 1403 / 1404 / 1405
High Voltage General Purpose Diode
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
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FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.