MMBD1401 / 1403 / 1404 / 1405 CONNECTION DIAGRAMS 3 3 1401 3 1403 29 3 1 2 NC 1 2 1 2 3 3 1404 1405 2 SOT-23 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 175 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 A A °C TJ Operating Junction Temperature 150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max Units MMBD1401/1403/1404/1405* 350 2.8 357 mW mW/°C °C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 ã 1997 Fairchild Semiconductor Corporation MMBD1401 / 1403 / 1404 / 1405 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions BV Breakdown Voltage IR = 100 µA IR Reverse Current VF Forward Voltage VR = 120 V VR = 175 V IF = 10 mA IF = 50 mA IF = 200 mA IF = 300 mA VR = 0, f = 1.0 MHz CO Diode Capacitance TRR Reverse Recovery Time Min Max Units 200 760 IF = IR = 30 mA, IRR = 1.0 mA, RL = 100Ω V 40 100 800 920 1.0 1.1 2.0 nA nA mV mV V V pF 50 nS Typical Characteristics Ta= 25°C 300 3 5 10 20 30 50 I R - REVERSE CURRENT (uA) 50 Ta= 25°C 40 30 20 10 0 55 100 75 95 115 135 155 175 195 V R - REVERSE VOLTAGE (V) GENERAL RULE: The Reverse Current of a diode will approximately double for every ten (10) Degree C increase in Temperature REVERSE CURRENT vs REVERSE VOLTAGE IR - 180 to 255 V FORWARD VOLTAGE vs FORWARD CURRENT VF - 1.0 to 100 uA V VFF - FORWARD VOLTAGE (mV) 275 IR - REVERSE CURRENT (nA) 325 REVERSE CURRENT vs REVERSE VOLTAGE IR - 55 to 205 V IIRR - REVERSE CURRENT (nA) VVRR - REVERSE VOLTAGE (V) REVERSE VOLTAGE vs REVERSE CURRENT BV - 1.0 to 100 uA 100 90 Ta= 25°C 80 70 60 50 40 30 20 180 200 220 240 VR - REVERSE VOLTAGE (V) GENERAL RULE: The Reverse Current of a diode will approximately double for every ten Degree C increase in Temperature 255 Ta= 25°C 450 400 350 300 250 1 2 3 5 10 20 30 50 IF - FORWARD CURRENT (uA) 100 MMBD1401 / 1403 / 1404 / 1405 High Voltage General Purpoise Diode (continued) Typical Characteristics (continued) VVFF - FORWARD VOLTAGE (mV) 725 Ta= 25°C 700 650 600 550 500 450 0.1 FORWARD VOLTAGE vs FORWARD CURRENT VF - 10 to 800 mA 0.2 0.3 0.5 1 2 3 5 I F - FORWARD CURRENT (mA) 10 1.4 Ta= 25°C 1.3 1.2 1.1 1 0.9 0.8 0.7 10 20 30 50 100 200 300 IF - FORWARD CURRENT (mA) 500 800 Forward Voltage vs Ambient Temperature VF - 1.0 uA - 10 mA (-40 to + 80 Deg C) CAPACITANCE vs REVERSE VOLTAGE VR - 0 to 15 V VVFF - FORWARD VOLTAGE (mV) VVF F - FORWARD VOLTAGE (mV) FORWARD VOLTAGE vs FORWARD CURRENT VF - 0.1 to 10 mA 1.3 Ta= 25°C CAPACITANCE (pF) 800 Ta= -40°C 600 Ta= 25°C 400 Ta= +80°C 1.2 1.1 1 0.9 200 0.8 0.001 0.003 0.01 0.03 0.1 0.3 1 I F - FORWARD CURRENT (mA) 3 10 0 50 I - CURRENT (mA) 500 40 30 20 IF = IR = 30 mA Rloop = 100 Ohms 1 1.5 2 2.5 Irr - REVERSE RECOVERY CURRENT (mA) 3 4 6 8 10 REVERSE VOLTAGE (V) 12 14 15 Average Rectified Current (Io) & Forward Current (I F) versus Ambient Temperature (T A) REVERSE RECOVERY TIME vs REVERSE RECOVERY CURRENT (Irr) REVERSE RECOVERY (nS) 2 IR 400 300 CU RR EN TS TE AD Y Io - A ST VER AT AGE E REC -m TIFIE D CU A RRE NT mA 200 100 0 -F OR WA RD 0 50 100 150 o TA - AMBIENT TEMPERATURE ( C) MMBD1401 / 1403 / 1404 / 1405 High Voltage General Purpoise Diode (continued) Typical Characteristics (continued) POWER DERATING CURVE PD - POWER DISSIPATION (mW) 500 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 50 100 150 IO - AVERAGE TEMPERATURE ( oC) 200 MMBD1401 / 1403 / 1404 / 1405 High Voltage General Purpose Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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