SUM55P06-19L New Product Vishay Siliconix P-Channel 60-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY −60 D TrenchFETr Power MOSFET rDS(on) (W) ID (A)d 0.019 @ VGS = −10 V −55 0.025 @ VGS = −4.5 V −48 VDS (V) Qg (Typ) 76 APPLICATIONS D Automotive Such As − High-Side Switch − Motor Drives − 12-V Boardnet S TO-263 G G D S Top View D Ordering Information: SUM55P06-19L SUM55P06-19L—E3 (Lead (Pb)-Free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Currentd (TJ = 175_C) TC = 125_C Pulsed Drain Current Avalanche Current L = 0.1 0 1 mH Single Pulse Avalanche Energya TC = 25_C Power Dissipation TA = Operating Junction and Storage Temperature Range 25_Cb Symbol Limit VDS −60 VGS "20 ID V −55 −31 IDM −150 IAS −45 EAS 101 PD Unit 125c 3.75 A mJ W TJ, Tstg −55 to 175 _C Symbol Limit Unit Junction-to-Ambient PCB Mountb RthJA 40 Junction-to-Case RthJC 1.2 THERMAL RESISTANCE RATINGS Parameter _C/W Notes: a. Duty cycle v 1%. b. When mounted on 1” square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by package. Document Number: 73059 S-41778—Rev. B, 04-Oct-04 www.vishay.com 1 SUM55P06-19L New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = −250 mA −60 VGS(th) VDS = VGS, ID = −250 mA −1 IGSS VDS = 0 V, VGS = "20 V "100 VDS = −60 V, VGS = 0 V −1 VDS = −60 V, VGS = 0 V, TJ = 125_C −50 VDS = −60 V, VGS = 0 V, TJ = 175_C −250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currenta IDSS ID(on) VDS = −5 V, VGS = −10 V −120 VGS = −10 V, ID = −30 A Drain Source On-State Drain-Source On State Resistancea rDS(on) DS( ) 0.015 0.033 0.041 VDS = −15 V, ID = −50 A nA mA m 0.019 VGS = −10 V, ID = −30 A, TJ = 175_C gfs V A VGS = −10 V, ID = −30 A, TJ = 125_C VGS = −4.5 V, ID = −20 A Forward Transconductancea −3 0.020 W 0.025 20 S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec 3500 VGS = 0 V, VDS = −25 V, f = 1 MHz pF 290 76 VDS = −30 V, VGS = −10 V, ID = −55 A 16 f = 1.0 MHz 5.2 Qgd 115 nC 19 Rg td(on) 12 W 20 tr VDD = −30 30 V, RL = 0.54 W 15 25 td(off) ID ] −55 A, VGEN = −10 V, Rg = 2.5 W 80 120 230 350 tf Source-Drain Diode Ratings and Characteristics (TC = Continuous Current 390 25_C)b Is −110 Pulsed Current ISM −240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = −50 A, VGS = 0 V −1.0 IF = −50 A,, di/dt = 100 A/ms m 0.059 trr IRM(REC) Qrr ns A −1.5 V 45 68 ns −2.6 4.0 A 0.136 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73059 S-41778—Rev. B, 04-Oct-04 SUM55P06-19L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 200 TC = −55_C VGS = 10 thru 6 V 160 120 4V 80 40 6 80 3V 0 3 125_C 120 40 2V 0 25_C 160 5V I D − Drain Current (A) I D − Drain Current (A) Transfer Characteristics 200 9 12 0 15 0 1 VDS − Drain-to-Source Voltage (V) 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 100 0.05 r DS(on) − On-Resistance ( W ) g fs − Transconductance (S) TC = −55_C 80 25_C 60 125_C 40 20 0 0.04 0.03 VGS = 4.5 V VGS = 10 V 0.02 0.01 0.00 0 6 12 18 24 30 36 42 48 54 60 0 20 40 ID − Drain Current (A) 80 100 ID − Drain Current (A) Capacitance 5000 60 Gate Charge 20 C − Capacitance (pF) 4000 V GS − Gate-to-Source Voltage (V) 4500 Ciss 3500 3000 2500 2000 1500 Coss 1000 Crss 500 0 VDS = 30 V ID = 55 A 16 12 8 4 0 0 10 20 30 40 50 VDS − Drain-to-Source Voltage (V) Document Number: 73059 S-41778—Rev. B, 04-Oct-04 60 0 20 40 60 80 100 120 140 160 Qg − Total Gate Charge (nC) www.vishay.com 3 SUM55P06-19L New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.2 VGS = 10 V ID = 30 A I S − Source Current (A) 1.9 rDS(on) − On-Resiistance (Normalized) Source-Drain Diode Forward Voltage 100 1.6 1.3 1.0 TJ = 150_C TJ = 25_C 10 0.7 0.4 −50 −25 0 25 50 75 100 125 150 1 175 0.0 0.3 TJ − Junction Temperature (_C) 0.9 1.2 VSD − Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1000 0.6 75 72 ID = 10 mA 10 V (BR)DSS (V) I Dav (a) 100 IAV (A) @ TA = 25_C 69 66 1 63 IAV (A) @ TA = 150_C 0.1 0.0001 0.001 0.01 tin (Sec) www.vishay.com 4 0.1 1 60 −50 −25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (_C) Document Number: 73059 S-41778—Rev. B, 04-Oct-04 SUM55P06-19L New Product Vishay Siliconix THERMAL RATINGS 60 Maximum Drain Current vs. Case Temperature Safe Operating Area 1000 *Limited by rDS(on) 50 10 ms I D − Drain Current (A) I D − Drain Current (A) 100 40 30 20 100 ms 10 1 ms 1 10 0 0.1 0 25 50 75 100 125 150 175 0.1 10 100 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 1 VDS − Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified TC − Case Temperature (_C) Normalized Effective Transient Thermal Impedance 10 ms 100 ms, dc TC = 25_C Single Pulse Duty Cycle = 0.5 0.2 Notes: PDM 0.1 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 Single Pulse t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 0.01 10−4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73059. Document Number: 73059 S-41778—Rev. B, 04-Oct-04 www.vishay.com 5