SUM90N10-8m2P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) Qg (Typ) 100 0.0082 at VGS = 10 V 90d 97 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Power Supply - Secondary Synchronous Rectification • Industrial • Primary Switch D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information: SUM90N10-8m2P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc Unit V 90d 90d 240 IAS 60 EAS 180 A mJ b PD 300 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) RthJA 40 RthJC 0.5 °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 74643 S-71690-Rev. A, 13-Aug-07 www.vishay.com 1 SUM90N10-8m2P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min V(BR)DSS VDS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 4.5 ± 250 VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 150 °C 250 ID(on) rDS(on) gfs VDS ≥ 10 V, VGS = 10 V 70 V nA µA A VGS = 10 V, ID = 20 A 0.0067 0.0082 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0127 0.0170 VDS = 15 V, ID = 20 A 62 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 182 Total Gate Chargec Qg 97 Gate-Source Chargec Gate-Drain Chargec VDS = 50 V, VGS = 10 V, ID = 85 A td(on) c td(off) tr Fall Timec pF 535 150 nC 32 25 Rg c Rise Timec Turn-Off Delay Time VGS = 0 V, VDS = 50 V, f = 1 MHz Qgd Gate Resistance Turn-On Delay Time Qgs 6290 f = 1 MHz VDD = 50 V, RL = 0.588 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω tf 1.4 2.8 23 35 17 26 34 52 9 18 Ω ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr IF = 75 A, di/dt = 100 A/µs A 0.85 1.5 V 61 100 ns 3.0 4.5 A 91 130 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74643 S-71690-Rev. A, 13-Aug-07 SUM90N10-8m2P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 120 180 VGS = 10 thru 7 V 150 g fs - Transconductance (S) ID - Drain Current (A) 100 80 60 6V 40 20 TC = - 55 °C 120 TC = 25 °C 90 TC = 125 °C 60 30 5V 0 0 0 1 2 3 4 5 0 12 24 36 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) Output Characteristics Transconductance 48 60 0.05 100 ID = 20 A r DS(on) - On-Resistance (Ω) I D - Drain Current (A) 80 60 40 TC = 125 °C TC = 25 °C 20 2 4 6 8 0.03 0.02 TA = 150 °C 0.01 TA = 25 °C TC = - 55 °C 0.00 4.0 0 0 0.04 10 5.2 6.4 7.6 8.8 10.0 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-resistance vs. Gate-to-Source Voltage Transfer Characteristics 0.0073 8000 0.0071 6400 0.0069 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) Ciss VGS = 10 V 0.0067 0.0065 4800 3200 1600 Coss 0.0063 Crss 0 0 20 40 60 80 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 74643 S-71690-Rev. A, 13-Aug-07 100 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUM90N10-8m2P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.7 2.5 ID = 20 A VGS(th) Variance (V) VGS = 10 V (Normalized) r DS(on) - On-Resistance 0.2 2.0 1.5 - 0.3 ID = 5 mA - 0.8 - 1.3 1.0 ID = 250 µA - 1.8 0.5 - 50 - 25 0 25 50 75 100 125 150 - 2.3 - 50 175 - 25 0 75 100 125 150 175 125 150 175 Threshold Voltage On-Resistance vs. Junction Temperature 130 10 ID = 85 A ID = 1 mA VDS = 50 V VDS = 30 V 8 124 V(BR)DSS (normalized) VGS - Gate-to-Source Voltage (V) 50 TJ - Temperature (°C) TJ - Junction Temperature (°C) VDS = 70 V 6 4 118 112 106 2 100 - 50 0 0 22 44 66 88 110 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) Drain Source Breakdown vs. Junction Temperature Gate Charge 140 100 TJ = 150 °C 112 ID - Drain Current (A) 10 I S - Source Current (A) 25 TJ = 25 °C 1 0.1 0.01 Package Limited 84 56 28 0 0.001 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage www.vishay.com 4 1.2 0 25 50 75 100 125 150 TC - Case Temperature (°C) Maximum Drain Current vs. Case Temperature Document Number: 74643 S-71690-Rev. A, 13-Aug-07 SUM90N10-8m2P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 1000 *Limited by r DS(on) I D - Drain Current (A) I DAV (A) 100 TJ = 25 °C TJ = 150 °C 10 100 µs 10 1 ms 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 1 10-5 10-4 10-3 10-2 10-1 0.1 0.1 1 1 t AV (sec) *VGS Single Pulse Avalanche Current Capability vs. Time 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74643. Document Number: 74643 S-71690-Rev. A, 13-Aug-07 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1