VISHAY SUP90N06-6M0P

SUP90N06-6m0P
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
ID (A)
Qg (Typ)
60
0.006 at VGS = 10 V
90d
78.5
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• 100 % Rg and UIS Tested
RoHS
COMPLIANT
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• Industrial
TO-220AB
D
G
G D S
Top View
S
Ordering Information: SUP90N06-6m0P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
ID
IDM
Pulsed Drain Current
Avalanche Current
a
L = 0.1 mH
Single Avalanche Energy
TC = 25 °C
Maximum Power Dissipationa
TA = 25
Operating Junction and Storage Temperature Range
°Cc
Unit
V
90d
90d
240
IAS
50
EAS
125
A
mJ
b
PD
272
3.75
W
TJ, Tstg
- 55 to 175
°C
Symbol
Limit
Unit
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
RthJA
40
RthJC
0.55
°C/W
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69536
S-72508-Rev. A, 03-Dec-07
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SUP90N06-6m0P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
V(BR)DSS
VDS = 0 V, ID = 250 µA
60
VGS(th)
VDS = VGS, ID = 250 µA
2.5
IGSS
VDS = 0 V, VGS = ± 20 V
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IDSS
4.5
± 250
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 125 °C
50
VDS = 60 V, VGS = 0 V, TJ = 150 °C
250
VDS ≥ 10 V, VGS = 10 V
ID(on)
rDS(on)
70
nA
µA
A
VGS = 10 V, ID = 20 A
0.005
0.006
VGS = 10 V, ID = 20 A, TJ = 125 °C
0.008
0.010
VDS = 15 V, ID = 20 A
58
gfs
V
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
250
Total Gate Chargec
Qg
78.5
Gate-Source
Chargec
Gate-Drain Chargec
VDS = 30 V, VGS = 10 V, ID = 50 A
td(on)
c
td(off)
tr
Fall Timec
pF
620
120
nC
28
20.6
Rg
c
Rise Timec
Turn-Off Delay Time
VGS = 0 V, VDS = 30 V, f = 1 MHz
Qgd
Gate Resistance
Turn-On Delay Time
Qgs
4700
f = 1 MHz
VDD = 30 V, RL = 0.6 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω
tf
Source-Drain Diode Ratings and Characteristics TC = 25
1.2
2.4
16
30
10
20
25
40
8
15
IS
85
ISM
240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 20 A, VGS = 0 V
trr
IRM(REC)
Qrr
ns
°Cb
Pulsed Current
Continuous Current
Ω
IF = 75 A, di/dt = 100 A/µs
A
0.83
1.5
V
62
100
ns
3.8
5.7
A
118
180
nC
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69536
S-72508-Rev. A, 03-Dec-07
SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
120
VGS = 10 thru 7 V
80
I D - Drain Current (A)
I D - Drain Current (A)
100
80
60
40
6V
60
40
TC = 125 °C
20
20
- 55 °C
25 °C
0
0
0
1
2
3
4
0
5
2
4
6
8
10
80
100
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transconductance
0.0055
120
TC = - 55 °C
r DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
96
25 °C
72
125 °C
48
24
0.0053
0.0051
VGS = 10 V
0.0049
0.0047
0.0045
0
0
12
24
36
48
0
60
20
40
VGS - Gate-to-Source Voltage (V)
On-resistance vs. Gate-to-Source Voltage
Transfer Characteristics
6000
0.05
ID = 20 A
Ciss
4800
0.04
C - Capacitance (pF)
r DS(on) - On-Resistance (Ω)
60
ID - Drain Current (A)
25 °C
0.03
0.02
150 °C
3600
2400
1200
0.01
Coss
Crss
0
0.00
4
5
6
7
8
9
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Document Number: 69536
S-72508-Rev. A, 03-Dec-07
10
0
12
24
36
48
60
VDS - Drain-to-Source Voltage (V)
Capacitance
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SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.0
10
ID = 20 A
VDS = 15 V
1.7
VDS = 30 V
6
VDS = 45 V
4
VGS = 10 V
(Normalized)
8
r DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
ID = 50 A
1.4
1.1
0.8
2
0.5
- 50
0
0
17
34
51
68
85
- 25
0
Qg - Total Gate Charge (nC)
75
100
125
150
175
150
175
0.8
100
150 °C
10
0.2
V GS(th) Variance (V)
I S - Source Current (A)
50
Threshold Voltage
On-Resistance vs. Junction Temperature
1.0
25 °C
0.1
ID = 5 mA
- 0.4
- 1.0
ID = 250 µA
- 1.6
0.01
0.001
0.0
25
TJ - Junction Temperature (°C)
0.2
0.4
0.6
0.8
1.0
- 2.2
- 50
1.2
- 25
0
25
50
75
100
125
TJ - Junction Temperature (°C)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Gate Charge
76
100
ID = 1 mA
70
IDAV (A)
V(BR)VDSS (normalized)
73
67
25 °C
150 °C
10
64
61
58
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
Source-Drain Diode Forward Voltage
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175
1
0.00001
0.0001
0.001
0.01
0.1
1.0
TAV (s)
Maximum Drain Current vs. Case Temperature
Document Number: 69536
S-72508-Rev. A, 03-Dec-07
SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
1000
185
Limited by rDS(on)*
148
I D - Drain Current (A)
I D - Drain Current (A)
100
111
Package Limited
74
1 ms
10
10 ms
100 ms
DC
1
37
TC = 25 °C
Single Pulse
0.1
0
0
25
50
75
100
125
150
175
TC - Case Temperature (°C)
Single Pulse Avalanche Current Capability vs. Time
0.1
1
* VGS
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69536.
Document Number: 69536
S-72508-Rev. A, 03-Dec-07
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
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document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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