SUM65N20-30 Vishay Siliconix N-Channel 200-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 200 0.030 at VGS = 10 V 65a • • • • TrenchFET® Power MOSFET 175 °C Junction Temperature Low Thermal Resistance Package 100 % Rg Tested RoHS COMPLIANT APPLICATIONS • Isolated DC/DC Converters D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information: SUM65N20-30-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 200 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy b Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TA = 25 °Cd Operating Junction and Storage Temperature Range ID Unit V 65a 37a IDM 140 IAS 35 EAS 61 A mJ c PD 375 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) PCB Mount (TO-263)d RthJA 40 RthJC 0.4 °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). Document Number: 71702 S-80272-Rev. D, 11-Feb-08 www.vishay.com 1 SUM65N20-30 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 200 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ± 100 VDS = 200 V, VGS = 0 V 1 VDS = 200 V, VGS = 0 V, TJ = 125 °C 50 VDS = 200 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 5 V, VGS = 10 V ID(on) 120 VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea 4 gfs VDS = 15 V, ID = 30 A µA 0.030 0.063 VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea nA A 0.023 VGS = 10 V, ID = 30 A, TJ = 125 °C rDS(on) V Ω 0.084 25 S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Time 5100 VGS = 0 V, VDS = 25 V, f = 1 MHz 210 90 VDS = 100 V, VGS = 10 V, ID = 85 A Fall Timec td(off) 130 nC 23 34 0.5 td(on) tr c pF 480 VDD = 100 V, RL = 1.5 Ω ID ≅ 65 A, VGEN = 10 V, Rg = 2.5 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 1.7 3.3 24 35 220 330 45 70 200 300 65 Pulsed Current ISM 140 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 65 A, VGS = 0 V trr IRM(REC) Qrr ns °Cb IS Continuous Current Ω IF = 50 A, di/dt = 100 A/µs A 1.0 1.5 V 130 200 ns 8 12 A 0.52 1.2 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71702 S-80272-Rev. D, 11-Feb-08 SUM65N20-30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 140 140 VGS = 10 thru 7 V 6V 120 I D - Drain Current (A) I D - Drain Current (A) 120 100 80 60 40 100 80 60 TC = 125 °C 40 5V 20 25 °C 20 4V - 55 °C 0 0 0 2 4 6 8 10 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 180 0.060 TC = - 55 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 150 25 °C 120 125 °C 90 60 0.045 VGS = 10 V 0.030 0.015 30 0.000 0 0 20 40 60 80 100 0 120 20 40 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 7000 20 VGS - Gate-to-Source Voltage (V) 6000 Ciss C - Capacitance (pF) 60 5000 4000 3000 2000 Crss 1000 VDS = 100 V ID = 65 A 16 12 8 4 Coss 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge Document Number: 71702 S-80272-Rev. D, 11-Feb-08 150 www.vishay.com 3 SUM65N20-30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 3.0 100 VGS = 10 V ID = 30 A I S - Source Current (A) 2.0 (Normalized) rDS(on) - On-Resistance 2.5 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 240 230 ID = 1.0 mA 100 V(BR)DSS (V) I Dav (A) 220 IAV (A) at TA = 25 °C 10 210 200 1 190 IAV (A) at TA = 150 °C 0.1 0.00001 0.0001 0.001 0.01 0.1 tin (s) Avalanche Current vs. Time www.vishay.com 4 1 180 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature Document Number: 71702 S-80272-Rev. D, 11-Feb-08 SUM65N20-30 Vishay Siliconix THERMAL RATINGS 1000 75 rDS(on) Limited* 60 10 µs I D - Drain Current (A) I D - Drain Current (A) 100 45 30 100 µs 10 1 15 0 0 25 50 75 100 125 150 0.1 0.1 175 1 ms 10 ms 100 ms DC TC = 25 °C Single Pulse 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum V GS at which rDS(on) is specified TC - Ambient Temperature (°C) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71702. Document Number: 71702 S-80272-Rev. D, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1