SUP90N04-3m3P Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 87 APPLICATIONS • Power Supply - Secondary Synchronous Rectification • DC/DC Converter TO-220AB D G G D S S Top View N-Channel MOSFET Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc V 90d 90d 160 IAS 60 EAS 180 PD Unit 125 A mJ b 3.1 W TJ, Tstg - 55 to 150 °C Symbol Limit Unit RthJA 40 RthJC 1 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 65902 S10-0632-Rev. A, 22-Mar-10 www.vishay.com 1 SUP90N04-3m3P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 40 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS ID(on) RDS(on) gfs 2.5 ± 250 VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C 50 VDS = 40 V, VGS = 0 V, TJ = 150 °C 250 VDS ≥ 10 V, VGS = 10 V 50 V nA µA A VGS = 10 V, ID = 22 A 0.0027 0.0033 VGS = 4.5 V, ID = 20 A 0.0034 0.0041 VDS = 15 V, ID = 20 A 169 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c Rg Gate Resistance Turn-On Delay Timec Rise Timec 87 VDS = 20 V, VGS = 10 V, ID = 20 A Fall Timec td(off) 131 nC 15.3 12.2 f = 1 MHz td(on) tr c pF 705 283 Qgd Gate-Drain Charge Turn-Off Delay Time 5286 VGS = 0 V, VDS = 20 V, f = 1 MHz VDD = 20 V, RL = 2 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω tf Drain-Source Body Diode Ratings and Characteristics TC = 25 °C 0.5 2.7 5.4 11 20 7 14 45 68 7 14 90 Pulsed Current ISM 160 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 10 A, VGS = 0 V 0.72 IF = 10 A, dI/dt = 100 A/µs 52 trr IRM(REC) Qrr ns b IS Continuous Current Ω A 1.2 V 42 63 ns 2.5 3.8 A 78 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65902 S10-0632-Rev. A, 22-Mar-10 SUP90N04-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 160 0.0040 RDS(on) - On-Resistance (Ω) VGS = 10 V thru 3 V ID - Drain Current (A) 120 2V 80 40 0 0.0030 VGS = 10 V 0.0025 0.0020 0 0.5 1.0 1.5 2.0 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 10 0.10 8 0.08 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) VGS = 4.5 V 0.0035 TC = 25 °C 6 4 2 100 0.06 TJ = 150 °C 0.04 TJ = 25 °C 0.02 TC = 125 °C TC = - 55 °C 0 0.00 0 0.6 1.2 1.8 2.4 3.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 10 10 450 ID = 24 A gfs - Transconductance (S) VGS - Gate-to-Source Voltage (V) TC = 25 °C 360 TC = - 55 °C 270 TC = 125 °C 180 90 8 VDS = 8 V 6 VDS = 15 V 4 VDS = 24 V 2 0 0 0 16 32 48 64 80 0 15 30 45 60 ID - Drain Current (A) Qg - Total Gate Charge Transconductance Gate Charge Document Number: 65902 S10-0632-Rev. A, 22-Mar-10 75 90 www.vishay.com 3 SUP90N04-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.2 1.7 10 VGS(th) (V) IS - Source Current (A) 100 TJ = 150 °C TJ = 25 °C ID = 250 μA 1.2 1 0.7 0.1 0.0 0.3 0.6 0.9 0.2 - 50 1.2 - 25 0 25 50 75 100 125 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 150 175 125 150 50 8000 VDS - Drain-to-Source Voltage (V) ID = 250 μA C - Capacitance (pF) 6000 Ciss 4000 2000 Coss Crss 10 20 30 46 44 42 40 - 50 0 0 48 40 - 25 0 25 50 75 100 TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Capacitance Drain Source Breakdown vs. Junction Temperature 160 2.0 ID = 22 A VGS = 10 V 1.7 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) 120 1.4 VGS = 4.5 V 1.1 Package Limited 80 40 0.8 0 0.5 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 4 175 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating Document Number: 65902 S10-0632-Rev. A, 22-Mar-10 SUP90N04-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 1000 Limited by RDS(on)* ID - Drain Current (A) IDAV (A) 100 TJ = 25 °C 10 TJ = 150 °C 100 μs 10 1 ms 10 ms 100 ms, 1 s 10 s, DC 1 0.1 TA = 25 °C Single Pulse 1 0.00001 0.0001 0.001 0.01 0.01 0.1 0.1 Time (s) BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Single Pulse Avalanche Current Capability vs. Time Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65902. Document Number: 65902 S10-0632-Rev. A, 22-Mar-10 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1