ST H1061 NPN Plastic Power Transistor Low frequency power amplifier TO-220 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage VCEO 50 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 4 V Collector Current IC 3 A Power Dissipation Ptot 25 W Junction Temperature Tj 150 O Storage Temperature Range TS -45 to +150 O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/3/2006 ST H1061 Characteristics at Tamb=25 OC Parameter Symbol Min. Typ. Max. Unit STH1061A hFE 35 - 70 - STH1061B hFE 60 - 120 - STH1061C hFE 100 - 200 - STH1061D hFE 160 - 320 - hFE 35 - - - ICBO - - 0.1 mA VCE(sat) - - 1 V V(BR)CEO 50 - - V V(BR)CBO 50 - - V V(BR)EBO 4 - - V VBE - - 1.5 V fT - 8 - MHz DC Current Gain at VCE = 4 V, IC = 1 A at VCE = 4 V, IC = 0.1 A Collector Cutoff Current at VCB = 20 V Collector Saturation Voltage at IC = 2 A, IB = 0.2 A Collector Emitter Breakdown Voltage at IC = 50 mA Collector Base Breakdown Voltage at IC = 5 mA Emitter Base Breakdown Voltage at IE = 5 mA Base Emitter Voltage at IC = 1 A, VCE = 4 V Gain Bandwidth Product at VCE = 4 V, IC = 0.5 A SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/3/2006 ST H1061 TO-220 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 22/3/2006