MMBTSC2223 NPN Silicon Epitaxial Planar Transistor High frequency amplifier The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 +150 O C C Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group Collector Emitter Saturation Voltage at IC = 10 mA, IB = 1 mA Collector Cutoff Current at VCB = 30 V Emitter Cutoff Current at VEB = 4 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA Gain Bandwidth Product at VCE = 6 V, -IE =1 mA Output Capacitance at VCB = 6 V, IE = 0, f = 1 MHz Collector to Base Time Constant at VCE = 6 V, -IE = 1 mA, f = 31.9 MHz Noise Figure at VCE = 6 V, -IE = 1 mA, f = 100 MHz, RG = 50 Ω R O Y Symbol Min. Typ. Max. Unit hFE hFE hFE 40 60 90 - 80 120 180 - VCE(sat) - - 0.3 V ICBO - - 0.1 µA IEBO - - 0.1 µA V(BR)CBO 30 V(BR)CEO 20 - - V V(BR)EBO 4 - - V fT 400 600 - MHz COB - 1 - pF CC-rb'b - 12 - ps NF - 3 - dB V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 14/12/2005 MMBTSC2223 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 14/12/2005 MMBTSC2223 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 14/12/2005