MMBTSA1979 PNP Silicon Epitaxial Planar Transistor For medium power amplifier applications The transistor is subdivided into two groups, O and Y according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 500 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Tamb = 25 OC Parameter DC Current Gain at -VCE = 1 V, -IC = 100 mA Collector Base Breakdown Voltage at -IC = 100 µA Collector Emitter Breakdown Voltage at -IC = 1 mA Emitter Base Breakdown Voltage at -IE = 10 µA Collector Cutoff Current at -VCB = 40 V Emitter Cutoff Current at -VEB = 5 V Collector Saturation Voltage at -IC = 100 mA, -IB = 10 mA Transition Frequency at -VCE = 6 V, -IC = 20 mA Collector Output Capacitance at -VCB = 6 V, f = 1 MHz O Y Symbol Min. Typ. Max. Unit hFE hFE 70 120 - 140 240 - -V(BR)CBO 40 - - V -V(BR)CEO 32 - - V -V(BR)EBO 5 - - V -ICBO - - 0.1 µA -IEBO - - 0.1 µA -VCE(sat) - - 0.25 V fT - 200 - MHz Cob - 7.5 - pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/08/2006 MMBTSA1979 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/08/2006