VISHAY ST173C12CHK0P

ST173CPBF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
FEATURES
•
•
•
•
•
•
•
•
•
TO-200AB (A-PUK)
PRODUCT SUMMARY
Metal case with ceramic insulator
All diffused design
Center amplifying gate
Guaranteed high dV/dt
International standard case TO-200AB (A-PUK)
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
RoHS
COMPLIANT
TYPICAL APPLICATIONS
IT(AV)
330 A
•
•
•
•
Inverters
Choppers
Induction heating
All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
Ths
IT(RMS)
Ths
ITSM
I2 t
UNITS
330
A
55
°C
610
A
25
°C
50 Hz
4680
60 Hz
4900
50 Hz
110
60 Hz
100
VDRM/VRRM
Range
tq
VALUES
TJ
A
kA2s
1000 to 1200
V
15 to 30
µs
- 40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
10
1000
1100
12
1200
1300
ST173C..C
Document Number: 94366
Revision: 29-Apr-08
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
40
For technical questions, contact: [email protected]
www.vishay.com
1
ST173CPBF Series
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
Vishay High Power Products
CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
180° el
50 Hz
760
ITM
100 µs
180° el
660
1200
1030
5570
4920
400 Hz
730
590
1260
1080
2800
2460
1000 Hz
600
490
1200
1030
1620
1390
2500 Hz
350
270
850
720
800
680
50
50
50
VDRM
VDRM
VDRM
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current dI/dt
50
Heatsink temperature
40
Equivalent values for RC circuit
55
55
47/0.22
A
V
-
40
47/0.22
UNITS
A/µs
40
55
°C
Ω/µF
47/0.22
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at heatsink temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
°C
610
4680
t = 10 ms
t = 10 ms
I2t
A
55 (85)
t = 10 ms
t = 8.3 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
4900
100 % VRRM
reapplied
4120
No voltage
reapplied
UNITS
330 (120)
DC at 25 °C heatsink temperature double side cooled
t = 8.3 ms
Maximum I2t for fusing
VALUES
A
3940
Sinusoidal half wave,
initial TJ = TJ maximum
110
100
77
100 % VRRM
reapplied
kA2s
71
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
1100
Maximum peak on-state voltage
VTM
ITM = 600 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
2.07
Low level value of threshold voltage
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
1.55
High level value of threshold voltage
VT(TO)2
(I > π x IT(AV)), TJ = TJ maximum
1.61
Low level value of forward slope resistance
rt1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.87
High level value of forward slope resistance
rt2
(I > π x IT(AV)), TJ = TJ maximum
0.77
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
1000
kA2√s
V
mΩ
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate
of rise of turned on current
Typical delay time
SYMBOL
TEST CONDITIONS
VALUES
UNITS
dI/dt
TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt
1000
A/µs
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/µs
VR = 50 V, tp = 500 µs, dV/dt: See table in device code
minimum
Maximum turn-off time
maximum
www.vishay.com
2
For technical questions, contact: [email protected]
1.1
15
µs
30
Document Number: 94366
Revision: 29-Apr-08
ST173CPBF Series
Inverter Grade Thyristors Vishay High Power Products
(Hockey PUK Version), 330 A
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
500
V/µs
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
Maximum DC gate current required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
60
TJ = TJ maximum, f = 50 Hz, d% = 50
10
10
TJ = TJ maximum, tp ≤ 5 ms
20
5
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
TJ = TJ maximum, rated VDRM applied
W
A
V
200
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
TEST CONDITIONS
TJ
- 40 to 125
TStg
- 40 to 150
Maximum thermal resistance, junction to heatsink
RthJ-hs
Maximum thermal resistance, case to heatsink
RthC-hs
DC operation single side cooled
0.17
DC operation double side cooled
0.08
DC operation single side cooled
0.033
DC operation double side cooled
0.017
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
°C
K/W
4900
(500)
N
(kg)
50
g
TO-200AB (A-PUK)
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.015
0.016
0.011
0.011
120°
0.018
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Document Number: 94366
Revision: 29-Apr-08
For technical questions, contact: [email protected]
www.vishay.com
3
ST173CPBF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
130
ST173C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
120
110
100
Ø
90
Conduction angle
80
70
30°
60
60°
90°
50
120° 180°
100
90
120
80
40
200
160
Conduction period
70
60
50
60°
40
240
30°
0
DC
120°
200
100
90°
300
180°
400
500
600
Average On-State Current (A)
Average On-State Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
130
700
110
100
90
Ø
80
Conduction period
70
60
50
90°
40
30°
180°
60°
30
DC
Maximum Average On-State
Power Loss (W)
1000
ST173C..C Series
(Single side cooled)
RthJ-hs (DC) = 0.17 K/W
120
120°
180°
120°
90°
60°
30°
900
800
700
600
RMS limit
500
400
Ø
300
Conduction angle
200
ST173C..C Series
TJ = 125 °C
100
0
20
0
50
100
200
150
250
300
0
350
100 150 200 250 300 350 400 450
50
Average On-State Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
130
1400
ST173C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
120
110
Maximum Average On-State
Power Loss (W)
Maximum Allowable
Heatsink Temperature (°C)
Ø
80
20
0
Maximum Allowable
Heatsink Temperature (°C)
110
30
40
100
90
Ø
Conduction angle
80
70
30°
180°
60°
60
90°
50
120°
40
30
DC
180°
120°
90°
60°
30°
1200
1000
800
RMS limit
600
Ø
Conduction period
400
ST173C..C Series
TJ = 125 °C
200
0
0
50
100
150
200
250
300
350
Average On-State Current (A)
Fig. 3 - Current Ratings Characteristics
www.vishay.com
4
ST173C..C Series
(Double side cooled)
RthJ-hs (DC) = 0.08 K/W
120
Maximum Allowable
Heatsink Temperature (°C)
Maximum Allowable
Heatsink Temperature (°C)
130
400
0
100
200
300
400
500
600
700
Average On-State Current (A)
Fig. 6 - On-State Power Loss Characteristics
For technical questions, contact: [email protected]
Document Number: 94366
Revision: 29-Apr-08
ST173CPBF Series
Inverter Grade Thyristors Vishay High Power Products
(Hockey PUK Version), 330 A
1
At any rated load condition and with
rated VRRM applied following surge.
ST173C..C Series
Transient Thermal
Impedance ZthJ-hs (K/W)
Peak Half Sine Wave
On-State Current (A)
4500
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
4000
3500
3000
2500
0.1
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
0.01
ST173C..C Series
0.001
0.001
2000
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
5000
3500
3000
2500
2000
10
ST173C..C Series
TJ = 125 °C
200
ITM = 500 A
ITM = 300 A
ITM = 200 A
150
ITM = 100 A
100
50
ITM = 50 A
ST173C..C Series
1500
0
0.01
0.1
0
1
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 11 - Reverse Recovered Charge Characteristics
10 000
160
ST173C..C Series
ITM = 500 A
140
Irr - Maximum Reverse
Recovery Current (A)
Instantaneous On-State Current (A)
1
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Qrr - Maximum Reverse
Recovery Charge (µC)
Peak Half Sine Wave
On-State Current (A)
4000
0.1
250
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
4500
0.01
Square Wave Pulse Duration (s)
1000
TJ = 25 °C
TJ = 125 °C
ITM = 300 A
120
ITM = 200 A
ITM = 100 A
100
ITM = 50 A
80
60
40
ST173C..C Series
TJ = 125 °C
20
0
100
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
Document Number: 94366
Revision: 29-Apr-08
0
20
40
60
80
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Reverse Recovered Current Characteristics
For technical questions, contact: [email protected]
www.vishay.com
5
ST173CPBF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
500
200
50 Hz
100
1000
400
1500
1000
2500
3000
5000
tp
ST173C..C Series
Sinusoidal pulse
TC = 40 °C
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
400
2500
3000
5000
ST173C..C Series
Sinusoidal pulse
TC = 55 °C
tp
100
100
500
1500
1000
50 Hz
200
1000
100
10
100
1000
10 000
10
100
Pulse Basewidth (µs)
1000
10 000
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
500 400
1000
2000 1500
1000
2500
3000
5000
tp
100
10
100
50 Hz
200 100
ST173C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 50 A/µs
1000
Peak On-State Current (A)
Peak On-State Current (A)
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
50 Hz
1000
500 400
2000
2500
3000
1000
1500
tp
5000
100
10 000
10
100
Pulse Basewidth (µs)
200 100
ST173C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 50 A/µs
1000
10 000
Pulse Basewidth (µs)
Fig. 14 - Frequency Characteristics
10 000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
1000
1500
3000
500
1000
400 200 100
50 Hz
2500
5000
100
10 000
tp
10
10
100
ST173C..C Series
Trapezoidal pulse
TC = 40 °C
dI/dt = 100 A/µs
1000
10 000
Peak On-State Current (A)
Peak On-State Current (A)
10 000
200 100 50 Hz
500 400
1000
1000
1500
3000
Snubber circuit
Rs = 47 Ω
Cs = 0.22 µF
VD = 80 % VDRM
2500
5000
100
10 000
tp
10
10
Pulse Basewidth (µs)
100
ST173C..C Series
Trapezoidal pulse
TC = 55 °C
dI/dt = 100 A/µs
1000
10 000
Pulse Basewidth (µs)
Fig. 15 - Frequency Characteristics
www.vishay.com
6
For technical questions, contact: [email protected]
Document Number: 94366
Revision: 29-Apr-08
ST173CPBF Series
Inverter Grade Thyristors Vishay High Power Products
(Hockey PUK Version), 330 A
100 000
10 000
Peak On-State Current (A)
Peak On-State Current (A)
100 000
20 joules per pulse
1000
0.5
1
2 3 5
10
0.3
0.2
0.1
100
ST173C..C Series
Sinusoidal pulse
tp
ST173C..C Series
Rectangular pulse
dI/dt = 50 A/µs
10 000
20 joules per pulse
2
1000
10
3 5
1
0.5
0.3
0.2
100
0.1
tp
10
10
10
100
1000
10 000
10
Pulse Basewidth (µs)
100
1000
10 000
Pulse Basewidth (µs)
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω
tr ≤ 1 µs
IGD
0.01
tp = 20 ms
tp = 10 ms
tp = 5 ms
tp = 3.3 ms
TJ = 40 °C
VGD
0.1
0.001
(a)
TJ = 25 °C
1
(1) PGM = 10 W,
(2) PGM = 20 W,
(3) PGM = 40 W,
(4) PGM = 60 W,
(b)
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(1)
Device: ST173C..C Series
0.1
(2)
(3) (4)
Frequency limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
Document Number: 94366
Revision: 29-Apr-08
For technical questions, contact: [email protected]
www.vishay.com
7
ST173CPBF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
ORDERING INFORMATION TABLE
Device code
ST
17
3
C
12
C
H
K
1
-
P
1
2
3
4
5
6
7
8
9
10
11
1
-
Thyristor
2
-
Essential part number
3
-
3 = Fast turn-off
4
-
C = Ceramic PUK
5
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
6
-
C = PUK case TO-200AB (A-PUK)
7
-
Reapplied dV/dt code (for tq test condition)
8
-
tq code
9
-
0 = Eyelet terminals
(gate and aux. cathode unsoldered leads)
1 = Fast-on terminals
(gate and aux. cathode unsoldered leads)
2 = Eyelet terminals
dV/dt - tq combinations available
dV/dt (V/µs)
15
18
t (µs) 20
q
25
30
20
CL
CP
CK
CJ
--
50
-DP
DK
DJ
DH
100
-EP
EK
EJ
EH
200
-FP *
FK *
FJ
FH
400
--HK
HJ
HH
* Standard part number.
All other types available only on request.
(gate and aux. cathode soldered leads)
3 = Fast-on terminals
(gate and aux. cathode soldered leads)
10
-
Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)
11
-
P = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com
8
http://www.vishay.com/doc?95074
For technical questions, contact: [email protected]
Document Number: 94366
Revision: 29-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1