VISHAY 80RIA40MPBF

80RIA...PbF/81RIA...PbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 80 A
FEATURES
• Hermetic glass-metal seal
• International standard case TO-209AC (TO-94)
RoHS
COMPLIANT
• RoHS compliant
• Lead (Pb)-free
• Designed and qualified for industrial level
TO-209AC (TO-94)
TYPICAL APPLICATIONS
• DC motor controls
PRODUCT SUMMARY
• Controlled DC power supplies
IT(AV)
80 A
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
VALUES
UNITS
80
A
85
°C
125
IT(RMS)
ITSM
I2 t
50 Hz
1900
60 Hz
1990
50 Hz
18
60 Hz
16
VDRM/VRRM
Typical
tq
TJ
A
kA2s
400 to 1200
V
110
µs
- 40 to 125
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
40
400
500
80
800
900
120
1200
1300
80RIA
81RIA
Document Number: 94392
Revision: 11-Aug-08
For technical questions, contact: [email protected]
IDRM/IRRM MAXIMUM
AT TJ = 125 °C
mA
15
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80RIA...PbF/81RIA...PbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 80 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
IT(AV)
Maximum RMS on-state current
IT(RMS)
Maximum peak, one-cycle
non-repetitive surge current
ITSM
TEST CONDITIONS
180° conduction, half sine wave
I2√t
85
°C
t = 10 ms
1900
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I2√t for fusing
A
125
t = 10 ms
I2 t
UNITS
80
DC at 75 °C case temperature
t = 8.3 ms
Maximum I2t for fusing
VALUES
No voltage
reapplied
100 % VRRM
reapplied
No voltage
reapplied
1990
Sinusoidal half wave,
initial TJ = TJ maximum
1675
18
16
12.7
100 % VRRM
reapplied
180.5
Low level value of threshold voltage
VT(TO)1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
0.99
VT(TO)2
(I > π x IT(AV)), TJ = TJ maximum
1.13
Low level value of on-state slope resistance
rt1
(16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum
2.29
High level value of on-state slope resistance
rt2
(I > π x IT(AV)), TJ = TJ maximum
1.84
Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse
1.60
VTM
Maximum holding current
IH
Typical latching current
IL
kA2s
11.7
t = 0.1 to 10 ms, no voltage reapplied
High level value of threshold voltage
Maximum on-state voltage
A
1600
200
TJ = 25 °C, anode supply 12 V resistive load
400
kA2√s
V
mΩ
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of
rise of turned-on current
SYMBOL
TEST CONDITIONS
VALUES
UNITS
dI/dt
TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber
0.2 µF, 15 Ω, gate pulse: 20 V, 65 Ω, tp = 6 µs, tr = 0.5 µs
Per JEDEC standard RS-397, 5.2.2.6.
300
A/µs
Typical delay time
td
Gate pulse: 10 V, 15 Ω source, tp = 6 µs, tr = 0.1 µs,
Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C
Typical turn-off time
tq
ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs, VR = 50
V, dV/dt = 20 V/µs, gate bias: 0 V 25 Ω, tp = 500 µs
110
SYMBOL
TEST CONDITIONS
VALUES
UNITS
1
µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = 125 °C exponential to 67 % rated VDRM
500
V/µs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = 125 °C rated VDRM/VRRM applied
15
mA
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For technical questions, contact: [email protected]
Document Number: 94392
Revision: 11-Aug-08
80RIA...PbF/81RIA...PbF Series
Phase Control Thyristors
(Stud Version), 80 A
Vishay High Power Products
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+ VGM
Maximum peak negative gate voltage
- VGM
TEST CONDITIONS
VALUES
TJ = TJ maximum, tp ≤ 5 ms
12
TJ = TJ maximum, f = 50 Hz, d% = 50
3
TJ = TJ maximum, tp ≤ 5 ms
20
IGT
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units 6 V
anode to cathode applied
TJ = 25 °C
TJ = 125 °C
DC gate current not to trigger
mA
120
60
3.5
V
2.5
1.5
IGD
TJ = TJ maximum
DC gate voltage not to trigger
V
270
TJ = 25 °C
TJ = - 40 °C
VGT
A
10
TJ = 125 °C
Maximum DC gate voltage required to trigger
W
3
TJ = - 40 °C
Maximum DC gate current required to trigger
UNITS
VGD
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated VDRM anode to cathode
applied
6
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction
temperature range
TEST CONDITIONS
TJ
- 40 to 125
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.30
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.1
°C
K/W
Non-lubricated threads
15.5
(137)
Lubricated threads
14
(120)
Mounting torque, ± 10 %
Approximate weight
130
Case style
See dimensions - link at the end of datasheet
N·m
(lbf · in)
g
TO-209AC (TO-94)
ΔRthJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.042
0.030
120°
0.050
0.052
90°
0.064
0.070
60°
0.095
0.100
30°
0.164
0.165
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
Document Number: 94392
Revision: 11-Aug-08
For technical questions, contact: [email protected]
www.vishay.com
3
80RIA...PbF/81RIA...PbF Series
Vishay High Power Products Phase Control Thyristors
Maximum Allowable Case Temperature (°C)
130
80RIA Series
RthJC (DC) = 0.30 K/W
120
110
Conduc tion Angle
100
30°
60°
90°
120°
90
180°
80
0
10 20
30 40
50 60 70
80 90
130
80RIA Series
RthJC (DC) = 0.30 K/W
120
110
Conduction Period
100
90
30°
80
60°
90°
120°
180°
DC
70
0
20
40
60
80
100
120
140
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
120
e lt
-D
K/
W
a
R
1.4
K/
W
RMSLimit
60
/W
4K
0.
70
1
=
80
A
90
W
K/
100
hS
R t
180°
120°
90°
60°
30°
110
6
0.
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
(Stud Version), 80 A
2K
/W
50
40
Conduction Angle
3 K/
30
80RIA Series
TJ = 125°C
20
10
W
5 K/ W
0
0
10
20
30
40
50
60
80
0
70
Average On-state Current (A)
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
180
DC
180°
120°
90°
60°
30°
160
140
120
R
th
SA
100
80
=
0.
6K
/W
0.
4
K/
W
-D
e lt
a
1K
/W
RMSLimit
Conduc tion Period
60
40
80RIA Series
TJ = 125°C
20
R
1.4
K/ W
2 K/
W
3 K/ W
5 K/ W
0
0
20
40
60
80
100
120
Average On-state Current (A)
140
0
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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For technical questions, contact: [email protected]
Document Number: 94392
Revision: 11-Aug-08
80RIA...PbF/81RIA...PbF Series
1800
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Phase Control Thyristors
(Stud Version), 80 A
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
1600
1400
1200
1000
80RIA Series
800
1
10
100
Vishay High Power Products
2000
Maximum Non Repetitive Surge Current
1900
Versus Pulse Train Duration. Control
1800 Of Conduction May Not Be Maintained.
Initial TJ = 125°C
1700
No Voltage Reapplied
1600
Rated VRRM Reapplied
1500
1400
1300
1200
1100
1000
900
80RIA Series
800
700
0.01
0.1
1
Pulse Train Duration (s)
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
10000
1000
100
TJ = 25°C
TJ = 125°C
10
80RIA Series
1
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Instantaneous On-state Voltage (V)
1
Steady State Value
R thJC = 0.30 K/W
Transient Thermal Impedance Z
thJC
(K/ W)
Fig. 7 - On-State Voltage Drop Characteristics
(DC Operation)
0.1
0.01
80RIA Series
0.001
0.0001
0.001
0.01
0.1
1
10
Sq uare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Document Number: 94392
Revision: 11-Aug-08
For technical questions, contact: [email protected]
www.vishay.com
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80RIA...PbF/81RIA...PbF Series
Vishay High Power Products Phase Control Thyristors
(Stud Version), 80 A
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 30ohms; tr<=0.5 µs
b) Recommended load line for
<=30% rated di/dt : 20V, 65ohms
10
tr<=1 µs
VGD
(1) PGM = 100W, tp = 500µs
(2) PGM = 50W, tp = 1ms
(3) PGM = 20W, tp = 2.5ms
(4) PGM = 10W, tp = 5ms
Tj=-40 °C
1
0.1
0.001
Tj=25 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
100
(1) (2)
(a)
(3) (4)
(b)
IGD
Device: 80RIA Series
0.01
0.1
Frequency Limited by PG(AV)
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
8
0
RIA
120
M
PbF
1
2
3
4
5
6
1
-
ITAV x 10 A
2
-
0 = Eyelet terminals (gate and auxiliary cathode leads)
1 = Fast-on terminals (gate and auxiliary cathode leads)
-
RIA = Essential part number
4
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
5
-
3
None = Stud base 1/2"-20UNF- 2 A threads
M = Stud base metric threads M12 x 1.75 E 6
6
-
Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
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http://www.vishay.com/doc?95003
For technical questions, contact: [email protected]
Document Number: 94392
Revision: 11-Aug-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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