80RIA...PbF/81RIA...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 80 A FEATURES • Hermetic glass-metal seal • International standard case TO-209AC (TO-94) RoHS COMPLIANT • RoHS compliant • Lead (Pb)-free • Designed and qualified for industrial level TO-209AC (TO-94) TYPICAL APPLICATIONS • DC motor controls PRODUCT SUMMARY • Controlled DC power supplies IT(AV) 80 A • AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC VALUES UNITS 80 A 85 °C 125 IT(RMS) ITSM I2 t 50 Hz 1900 60 Hz 1990 50 Hz 18 60 Hz 16 VDRM/VRRM Typical tq TJ A kA2s 400 to 1200 V 110 µs - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 40 400 500 80 800 900 120 1200 1300 80RIA 81RIA Document Number: 94392 Revision: 11-Aug-08 For technical questions, contact: [email protected] IDRM/IRRM MAXIMUM AT TJ = 125 °C mA 15 www.vishay.com 1 80RIA...PbF/81RIA...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 80 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM TEST CONDITIONS 180° conduction, half sine wave I2√t 85 °C t = 10 ms 1900 t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing A 125 t = 10 ms I2 t UNITS 80 DC at 75 °C case temperature t = 8.3 ms Maximum I2t for fusing VALUES No voltage reapplied 100 % VRRM reapplied No voltage reapplied 1990 Sinusoidal half wave, initial TJ = TJ maximum 1675 18 16 12.7 100 % VRRM reapplied 180.5 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.99 VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.13 Low level value of on-state slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 2.29 High level value of on-state slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 1.84 Ipk = 250 A, TJ = 25 °C, tp = 10 ms sine pulse 1.60 VTM Maximum holding current IH Typical latching current IL kA2s 11.7 t = 0.1 to 10 ms, no voltage reapplied High level value of threshold voltage Maximum on-state voltage A 1600 200 TJ = 25 °C, anode supply 12 V resistive load 400 kA2√s V mΩ V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL TEST CONDITIONS VALUES UNITS dI/dt TJ = 125 °C, Vd = Rated VDRM, ITM = 2 x dI/dt snubber 0.2 µF, 15 Ω, gate pulse: 20 V, 65 Ω, tp = 6 µs, tr = 0.5 µs Per JEDEC standard RS-397, 5.2.2.6. 300 A/µs Typical delay time td Gate pulse: 10 V, 15 Ω source, tp = 6 µs, tr = 0.1 µs, Vd = Rated VDRM, ITM = 50 Adc, TJ = 25 °C Typical turn-off time tq ITM = 50 A, TJ = TJ maximum, dI/dt = - 5 A/µs, VR = 50 V, dV/dt = 20 V/µs, gate bias: 0 V 25 Ω, tp = 500 µs 110 SYMBOL TEST CONDITIONS VALUES UNITS 1 µs BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = 125 °C exponential to 67 % rated VDRM 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 °C rated VDRM/VRRM applied 15 mA www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 94392 Revision: 11-Aug-08 80RIA...PbF/81RIA...PbF Series Phase Control Thyristors (Stud Version), 80 A Vishay High Power Products TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM TEST CONDITIONS VALUES TJ = TJ maximum, tp ≤ 5 ms 12 TJ = TJ maximum, f = 50 Hz, d% = 50 3 TJ = TJ maximum, tp ≤ 5 ms 20 IGT Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = 25 °C TJ = 125 °C DC gate current not to trigger mA 120 60 3.5 V 2.5 1.5 IGD TJ = TJ maximum DC gate voltage not to trigger V 270 TJ = 25 °C TJ = - 40 °C VGT A 10 TJ = 125 °C Maximum DC gate voltage required to trigger W 3 TJ = - 40 °C Maximum DC gate current required to trigger UNITS VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 6 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.30 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.1 °C K/W Non-lubricated threads 15.5 (137) Lubricated threads 14 (120) Mounting torque, ± 10 % Approximate weight 130 Case style See dimensions - link at the end of datasheet N·m (lbf · in) g TO-209AC (TO-94) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.042 0.030 120° 0.050 0.052 90° 0.064 0.070 60° 0.095 0.100 30° 0.164 0.165 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94392 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 3 80RIA...PbF/81RIA...PbF Series Vishay High Power Products Phase Control Thyristors Maximum Allowable Case Temperature (°C) 130 80RIA Series RthJC (DC) = 0.30 K/W 120 110 Conduc tion Angle 100 30° 60° 90° 120° 90 180° 80 0 10 20 30 40 50 60 70 80 90 130 80RIA Series RthJC (DC) = 0.30 K/W 120 110 Conduction Period 100 90 30° 80 60° 90° 120° 180° DC 70 0 20 40 60 80 100 120 140 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 120 e lt -D K/ W a R 1.4 K/ W RMSLimit 60 /W 4K 0. 70 1 = 80 A 90 W K/ 100 hS R t 180° 120° 90° 60° 30° 110 6 0. Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) (Stud Version), 80 A 2K /W 50 40 Conduction Angle 3 K/ 30 80RIA Series TJ = 125°C 20 10 W 5 K/ W 0 0 10 20 30 40 50 60 80 0 70 Average On-state Current (A) 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 180 DC 180° 120° 90° 60° 30° 160 140 120 R th SA 100 80 = 0. 6K /W 0. 4 K/ W -D e lt a 1K /W RMSLimit Conduc tion Period 60 40 80RIA Series TJ = 125°C 20 R 1.4 K/ W 2 K/ W 3 K/ W 5 K/ W 0 0 20 40 60 80 100 120 Average On-state Current (A) 140 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94392 Revision: 11-Aug-08 80RIA...PbF/81RIA...PbF Series 1800 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) Phase Control Thyristors (Stud Version), 80 A At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1600 1400 1200 1000 80RIA Series 800 1 10 100 Vishay High Power Products 2000 Maximum Non Repetitive Surge Current 1900 Versus Pulse Train Duration. Control 1800 Of Conduction May Not Be Maintained. Initial TJ = 125°C 1700 No Voltage Reapplied 1600 Rated VRRM Reapplied 1500 1400 1300 1200 1100 1000 900 80RIA Series 800 700 0.01 0.1 1 Pulse Train Duration (s) Number Of Equa l Amplitude Half Cycle Current Pulses (N) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 10000 1000 100 TJ = 25°C TJ = 125°C 10 80RIA Series 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Instantaneous On-state Voltage (V) 1 Steady State Value R thJC = 0.30 K/W Transient Thermal Impedance Z thJC (K/ W) Fig. 7 - On-State Voltage Drop Characteristics (DC Operation) 0.1 0.01 80RIA Series 0.001 0.0001 0.001 0.01 0.1 1 10 Sq uare Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Document Number: 94392 Revision: 11-Aug-08 For technical questions, contact: [email protected] www.vishay.com 5 80RIA...PbF/81RIA...PbF Series Vishay High Power Products Phase Control Thyristors (Stud Version), 80 A Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30ohms; tr<=0.5 µs b) Recommended load line for <=30% rated di/dt : 20V, 65ohms 10 tr<=1 µs VGD (1) PGM = 100W, tp = 500µs (2) PGM = 50W, tp = 1ms (3) PGM = 20W, tp = 2.5ms (4) PGM = 10W, tp = 5ms Tj=-40 °C 1 0.1 0.001 Tj=25 °C Tj=125 °C Instantaneous Gate Voltage (V) 100 (1) (2) (a) (3) (4) (b) IGD Device: 80RIA Series 0.01 0.1 Frequency Limited by PG(AV) 1 10 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code 8 0 RIA 120 M PbF 1 2 3 4 5 6 1 - ITAV x 10 A 2 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) - RIA = Essential part number 4 - Voltage code x 100 = VRRM (see Voltage Ratings table) 5 - 3 None = Stud base 1/2"-20UNF- 2 A threads M = Stud base metric threads M12 x 1.75 E 6 6 - Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 6 http://www.vishay.com/doc?95003 For technical questions, contact: [email protected] Document Number: 94392 Revision: 11-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. 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