ST333C..C Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A FEATURES • Metal case with ceramic insulator • All diffused design RoHS • Center amplifying gate COMPLIANT • Guaranteed high dV/dt • Guaranteed high dI/dt • International standard case TO-200AB (E-PUK) TO-200AB (E-PUK) • High surge current capability • Low thermal impedance • High speed performance • Lead (Pb)-free PRODUCT SUMMARY TYPICAL APPLICATIONS IT(AV) 720 A • Inverters • Choppers • Induction heating • All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM VALUES UNITS 720 A 55 °C 1435 A 25 °C 50 Hz 11 000 60 Hz 11 500 50 Hz 605 60 Hz 553 A I2 t VDRM/VRRM tq Range TJ kA2s 400 to 800 V 10 to 30 µs - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 ST333C..C Document Number: 93678 Revision: 15-May-08 For technical questions, contact: [email protected] IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 50 www.vishay.com 1 ST333C..C Series Inverter Grade Thyristors (Hockey PUK Version), 720 A Vishay High Power Products CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el 50 Hz 1630 ITM 100 µs 180° el 1420 2520 UNITS 2260 7610 6820 400 Hz 1630 1390 2670 2330 4080 3600 1000 Hz 1350 1090 2440 2120 2420 2100 2500 Hz 720 550 1450 1220 1230 1027 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 VDRM VDRM VDRM 50 - - Rise of on-state current dI/dt Heatsink temperature 40 Equivalent values for RC circuit 55 10/0.47 40 55 V A/µs 40 10/0.47 A 55 °C Ω/µF 10/0.47 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at heatsink temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I2√t Maximum peak on-state voltage VTM A 55 (75) °C 1435 11 000 No voltage reapplied 100 % VRRM reapplied No voltage reapplied UNITS 720 (350) DC at 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one half cycle, non-repetitive surge current VALUES 180° conduction, half sine wave Double side (single side) cooled 11 500 A 9250 9700 Sinusoidal half wave, initial TJ = TJ maximum 605 553 428 100 % VRRM reapplied kA2s 391 t = 0.1 to 10 ms, no voltage reapplied 6050 ITM = 1810 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.96 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.91 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 0.93 Low level value of forward slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.58 High level value of forward slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 kA2√s V mΩ mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned on current SYMBOL dI/dt VALUES TEST CONDITIONS MIN. MAX. TJ = TJ maximum, VDRM = Rated VDRM; ITM = 2 x dI/dt 1000 Typical delay time td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs Resistive load, gate pulse: 10 V, 5 Ω source Maximum turn-off time tq TJ = TJ maximum, ITM = 550 A, commutating dI/dt = 40 A/µs VR = 50 V, tp = 500 µs, dV/dt: See table in device code www.vishay.com 2 For technical questions, contact: [email protected] UNITS A/µs 1.1 µs 10 30 Document Number: 93678 Revision: 15-May-08 ST333C..C Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 50 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD 60 TJ = TJ maximum, f = 50 Hz, d% = 50 10 10 TJ = TJ maximum, tp ≤ 5 ms 20 5 TJ = 25 °C, VA = 12 V, Ra = 6 Ω TJ = TJ maximum, rated VDRM applied W A V 200 mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range TEST CONDITIONS TJ - 40 to 125 TStg - 40 to 150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.09 DC operation double side cooled 0.04 DC operation single side cooled 0.020 DC operation double side cooled 0.010 Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet °C K/W 9800 (1000) N (kg) 83 g TO-200AB (E-PUK) ΔRthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.010 0.011 0.007 0.007 120° 0.012 0.012 0.012 0.013 90° 0.015 0.015 0.016 0.017 60° 0.022 0.022 0.023 0.023 30° 0.036 0.036 0.036 0.037 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Document Number: 93678 Revision: 15-May-08 For technical questions, contact: [email protected] www.vishay.com 3 ST333C..C Series Inverter Grade Thyristors (Hockey PUK Version), 720 A Vishay High Power Products 130 ST333C..C Series (Single Side Cooled) Rth J- hs (DC) = 0.09 K/W 120 110 100 90 C o nd uc tio n A ng le 80 70 60 50 30° 60° 40 90° 30 120° 180° 20 0 100 200 300 400 500 600 Maxim um Allowable Heatsin k Tem perature (°C) Maximum Allowable Heatsink Temperature (°C) 130 ST333C..C Series ( Double Side Cooled ) Rth J-hs (DC) = 0.04 K/W 120 110 100 90 C o ndu ctio n Pe riod 80 70 30° 60 60° 50 90° 40 120° 180° 30 DC 20 0 Average On -state Current (A) Average O n-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 2 2 00 ST 3 3 3 C ..C S e rie s (Sin g le S id e C o o le d ) R th J-hs ( D C ) = 0 .0 9 K / W 1 20 1 10 1 00 90 80 Co nd uc tio n P e rio d 70 60 50 30° 40 6 0° 90° 12 0° 30 20 0 1 80° DC 10 0 2 00 30 0 40 0 5 00 6 0 0 70 0 80 0 9 00 M a x im um A v e r a g e O n - st a t e Po w e r L o ss (W ) M a xim u m A llo w ab le H e a t sin k T e m p e ra t u re (°C ) 1 30 2 0 00 1 8 0° 1 2 0° 90° 60° 30° 1 8 00 1 6 00 1 4 00 1 0 00 8 00 C o ndu ctio n A ng le 6 00 4 00 ST 3 3 3 C ..C S e r ie s TJ = 1 2 5°C 2 00 0 0 ST 3 3 3 C ..C S e r ie s (D o ub le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 4 K /W 100 90 80 C o nd uctio n A ng le 70 60 50 30° 60 ° 40 90 ° 30 1 2 0° 20 1 8 0° 10 0 2 00 4 00 60 0 800 400 60 0 80 0 1 00 0 1 00 0 A v e ra g e O n - st a t e C u rre n t (A ) Fig. 3 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics M a x im u m A v e ra g e O n - st a t e P o w e r Lo ss (W ) M a xim u m A llo w a b le H e at sin k T e m p e ra t u re (°C ) 130 110 20 0 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 2 - Current Ratings Characteristics 120 R M S Lim it 1 2 00 A v e ra g e O n -st a te C u rre n t (A ) www.vishay.com 4 200 400 600 800 1000 1200 1400 1600 26 0 0 24 0 0 22 0 0 20 0 0 18 0 0 16 0 0 14 0 0 12 0 0 10 0 0 800 600 400 200 0 DC 1 8 0° 1 2 0° 90° 60° 30° R M S L im it C o ndu ctio n Pe rio d S T3 3 3 C ..C Se rie s TJ = 1 2 5°C 0 20 0 4 0 0 6 0 0 8 0 0 1 0 00 1 2 00 14 0 0 1 60 0 A v e ra g e O n -st a t e C u rre n t (A ) Fig. 6 - On-State Power Loss Characteristics For technical questions, contact: [email protected] Document Number: 93678 Revision: 15-May-08 ST333C..C Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A 0 .1 At An y Rated L oad Con dition And W ith Rated V RR M Applied Following Surge. In itial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 9500 9000 8500 8000 7500 7000 6500 6000 5500 ST333C..C Series 5000 4500 1 10 100 T ran sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W ) Peak Half Sine W ave O n-state Current (A) 10000 S T3 3 3 C ..C Se r ie s S te a d y St a t e V a lu e R th J-hs = 0 .0 9 K /W (S in gle Sid e C o o le d ) 0 .0 1 R thJ-h s = 0 .0 4 K /W (D o u b le S id e C o o le d ) (D C O p e ra t io n ) 0 .0 0 1 0 .0 0 1 0 .0 1 Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 7000 6000 ST333C..C Series 1 Maximum Reverse Recovery Charge - Q rr (µC) Peak Half Sine Wave O n-state Curren t (A) 8000 0.1 Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled I TM = 50 0 A 3 00 A 2 00 A 10 0 A 50 A 300 280 260 240 220 200 180 160 140 ST333C..C Series TJ = 125 °C 120 100 80 10 20 30 40 50 60 70 80 90 100 Rate O f Fall O f O n-state Current - di/dt (A/µs) Pulse T rain Duration (s) Fig. 11 - Reverse Recovered Charge Characteristics 180 T = 25°C J 1000 T = 125°C J ST333C..C Series 100 0.5 1 1.5 2 2. 5 3 3. 5 4 4.5 5 5.5 6 6.5 Instan tan eous O n-state V oltage (V) Fig. 9 - On-State Voltage Drop Characteristics Document Number: 93678 Revision: 15-May-08 M ax im u m R e v e rse R e c o v e ry C u rre n t - Irr (A ) 10000 Instantaneous On-state Current (A) 10 320 Maxim um Non Repetitive Surge Current V ersus Pulse Train Duration. C ontrol 11000 O f Con duction May Not Be M ain tained. Initial TJ = 125°C 10000 No Voltage Reapplied Rated V RR MReapplied 9000 4000 0.01 1 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics 12000 5000 0. 1 Sq u a re W a v e P u ls e D ur at io n (s) N um b e r O f E q ual A m plitud e Half C yc le C urrent Pulse s (N ) IT M = 5 00 A 3 00 A 20 0 A 1 00 A 50 A 160 140 120 100 80 ST 3 3 3 C ..C S e rie s TJ = 1 2 5 ° C 60 40 20 10 20 30 40 50 60 70 80 9 0 1 00 R a te O f Fa ll O f Fo rw a rd C ur re n t - d i/ d t (A /µ s) Fig. 12 - Reverse Recovery Current Characteristics For technical questions, contact: [email protected] www.vishay.com 5 ST333C..C Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A P e a k O n -st a te C u rre n t (A ) 1 E4 1 000 4 00 20 0 50 0 1 00 50 Hz 50 0 1 50 0 20 0 1 00 50 H z 15 0 0 Snubb er c ircu it R s = 1 0 o hm s C s = 0 .47 µF V D = 80 % V D RM 25 00 1 E3 4 00 1 000 3 00 0 Snubb er circ uit R s = 1 0 o hm s C s = 0.4 7 µF V D = 80 % V D RM 2 50 0 3 00 0 50 00 tp 1 E2 1 E1 1E2 5 00 0 ST33 3 C..C Serie s Sin uso idal pulse TC = 40°C 1E3 1 E4 ST33 3C ..C Serie s Sinuso idal pulse TC = 55°C tp 1 E1 1E2 1E3 1E4 Pu lse B a se w id th (µ s) P ulse B a se w id th (µ s) Fig. 13 - Frequency Characteristics P e a k O n - st a t e C ur re n t (A ) 1E4 Snubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 µF V D = 80 % V D RM 100 0 50 0 40 0 2 00 10 0 10 00 50 0 15 00 20 0 0 1E3 50 Hz Snubbe r circuit R s = 1 0 o hm s C s = 0.47 µF V D = 80 % V D RM 2 5 00 3 0 00 10 0 40 0 2 00 1 5 00 20 00 2 50 0 3 00 0 ST3 33 C.. C Se ries Trap ezo id al p ulse TC = 4 0°C di/d t = 50 A/µs 5 00 0 tp 1E2 1 E1 1E2 1E3 50 Hz tp 50 00 1 E4 1E 1 ST33 3C. .C Se ries Trapezo idal p ulse TC = 55°C di/dt = 1 00A /µs 1 E2 1 E3 1 E4 P u lse Ba se w id th (µs) P u lse Ba se w id t h (µ s) Fig. 14 - Frequency Characteristics P e a k O n - st a te C u rre n t (A ) 1 E4 Snubbe r circ uit R s = 1 0 o hm s C s = 0.4 7 µF V D = 80 % V DR M 5 00 4 00 200 10 0 5 0 Hz 4 00 2 00 15 00 20 00 1 E3 2 50 0 1 50 0 20 00 2 50 0 tp 1E3 ST333 C.. C Se ries Trapezo id al p ulse TC = 55°C di/dt = 10 0A /µs 3 00 0 ST33 3 C..C Serie s Trape zoidal pulse TC = 40°C d i/dt = 100 A/µs 50 00 1 E2 5 0 Hz 10 0 0 Snubb er c ircuit R s = 10 o hm s C s = 0 .47 µ F V D = 80 % V D RM 3 00 0 1 E2 1 E1 10 0 50 0 100 0 tp 5 00 0 1E4 1E1 1E 2 1 E3 1 E4 P u lse Ba se w id th (µ s) P u lse B ase w id t h (µ s) Fig. 15 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 93678 Revision: 15-May-08 ST333C..C Series Inverter Grade Thyristors Vishay High Power Products (Hockey PUK Version), 720 A 1E4 20 jo ule s pe r p ulse P e a k O n - sta t e C u rre n t (A ) 3 5 ST3 33 C Se ries Rec tang ula r pulse di/dt = 50A /µs 10 tp 2 2 0 jou les p er pulse 10 5 3 1 1E3 2 0.5 1 0 .3 0 .5 0.2 0.4 0.3 1E2 0.2 tp ST33 3C ..C Se ries Sinuso idal pulse 1E1 1E1 1E2 1 E1 1 E14E 4 1E3 1E2 1 E3 1E4 P u lse Ba se w id t h (µ s) P u lse B ase w id t h (µ s) Fig. 16 - Maximum On-State Energy Power Loss Characteristics Re c t a n g ula r g a t e p u lse a ) R e c o m m e n d e d lo a d lin e fo r ra t e d d i/d t : 2 0 V , 1 0 o h m s; t r< =1 µ s b ) Re c o m m e n d e d lo a d lin e f o r < = 3 0 % ra te d d i/d t : 1 0 V , 1 0 o h m s 10 t r< =1 µ s (1) (2) (3) (4) PGM PGM PGM PGM = = = = 1 0W , 2 0W , 4 0W , 6 0W , tp tp tp tp = = = = 20 m s 10 m s 5m s 3 .3 m s (a ) (b ) Tj=25 °C 1 Tj=- 40 °C Tj=12 5 °C In st a n ta n e o u s G at e V o lt a ge ( V ) 1 00 (1) (2) (3 ) ( 4 ) VGD IG D 0 .1 0 .0 0 1 0 .0 1 D e v ic e : ST 3 3 3 C ..C Se rie s Fre q u e n c y L im ite d b y P G (A V ) 0 .1 1 10 1 00 In sta n t a n e o u s G at e C u rr e n t (A ) Fig. 17 - Gate Characteristics Document Number: 93678 Revision: 15-May-08 For technical questions, contact: [email protected] www.vishay.com 7 ST333C..C Series Vishay High Power Products Inverter Grade Thyristors (Hockey PUK Version), 720 A ORDERING INFORMATION TABLE Device code ST 33 3 C 08 C H K 1 - 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic PUK 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - C = PUK case TO-200AB (E-PUK) 7 - Reapplied dV/dt code (for tq test condition) 8 - 9 - dV/dt - tq combinations available dV/dt (V/µs) 20 50 100 200 400 10 CN DN EN --0 = Eyelet term. 12 CM DM EM FM* -DL EL FL* HL (gate and aux. cathode unsoldered leads) tq (µs) 15 CL 18 CP DP EP FP HP 1 = Fast-on term. 20 CK DK EK FK HK 25 ---FJ HJ (gate and aux. cathode unsoldered leads) 30 ----HH 2 = Eyelet term. * Standard part number. (gate and aux. cathode soldered leads) All other types available only on request. tq code 3 = Fast-on term. (gate and aux. cathode soldered leads) 10 - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95075 For technical questions, contact: [email protected] Document Number: 93678 Revision: 15-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1