ST173SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 175 A FEATURES • All diffused design • Center amplifying gate RoHS • Guaranteed high dV/dt COMPLIANT • Guaranteed high dI/dt • High surge current capability • Low thermal impedance TO-209AB (TO-93) • High speed performance • Compression bonding • Lead (Pb)-free • Designed and qualified for industrial level PRODUCT SUMMARY TYPICAL APPLICATIONS IT(AV) 175 A • Inverters • Choppers • Induction heating • All types of force-commutated converters MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 175 A 85 °C 275 ITSM I2 t 50 Hz 4680 60 Hz 4900 50 Hz 110 60 Hz 100 VDRM/VRRM tq Range TJ A kA2s 1000 to 1200 V 15 to 25 µs - 40 to 125 °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 10 1000 1100 12 1200 1300 ST173S Document Number: 94367 Revision: 29-Apr-08 For technical questions, contact: [email protected] IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 40 www.vishay.com 1 ST173SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 175 A CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el 50 Hz 500 ITM 100 µs 180° el 320 790 UNITS 550 4510 3310 400 Hz 450 290 810 540 1970 1350 1000 Hz 330 190 760 490 1050 680 2500 Hz 170 80 510 300 480 280 50 50 50 VDRM VDRM VDRM Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current dI/dt 50 Case temperature 60 Equivalent values for RC circuit 85 47/0.22 60 A V 85 47/0.22 A/µs 60 85 °C Ω/µF 47/0.22 ON-STATE CONDUCTION PARAMETER SYMBOL Maximum average on-state current at case temperature IT(AV) Maximum RMS on-state current IT(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 75 °C case temperature t = 10 ms Maximum peak, one half cycle, non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Maximum peak on-state voltage No voltage reapplied UNITS 175 A 85 °C 275 4680 No voltage reapplied 100 % VRRM reapplied VALUES 4900 A 3940 4120 Sinusoidal half wave, initial TJ = TJ maximum 110 100 77 100 % VRRM reapplied kA2s 71 I2√t t = 0.1 to 10 ms, no voltage reapplied 1100 VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.07 Low level value of threshold voltage VT(TO)1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 1.55 High level value of threshold voltage VT(TO)2 (I > π x IT(AV)), TJ = TJ maximum 1.58 Low level value of forward slope resistance rt1 (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum 0.87 High level value of forward slope resistance rt2 (I > π x IT(AV)), TJ = TJ maximum 0.82 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000 kA2√s V mΩ mA SWITCHING PARAMETER SYMBOL Maximum non-repetitive rate of rise of turned on current dI/dt Typical delay time td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 µs Resistive load, gate pulse: 10 V, 5 Ω source tq TJ = TJ maximum, ITM = 300 A, commutating dI/dt = 20 A/µs VR = 50 V, tp = 500 µs, dV/dt: See table in device code minimum Maximum turn-off time maximum www.vishay.com 2 TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt For technical questions, contact: [email protected] VALUES UNITS 1000 A/µs 1.1 15 µs 25 Document Number: 94367 Revision: 29-Apr-08 ST173SPbF Series Inverter Grade Thyristors (Stud Version), 175 A Vishay High Power Products BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM, higher value available on request 500 V/µs Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA SYMBOL TEST CONDITIONS VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM Maximum DC gate currrent required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD 60 TJ = TJ maximum, f = 50 Hz, d% = 50 W 10 10 TJ = TJ maximum, tp ≤ 5 ms A 20 V 5 200 TJ = 25 °C, VA = 12 V, Ra = 6 Ω mA 3 V 20 mA 0.25 V VALUES UNITS TJ = TJ maximum, rated VDRM applied THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction operating temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC DC operation 0.105 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads 31 (275) Lubricated threads 24.5 (210) Mounting torque, ± 10 % Approximate weight See dimensions - link at the end of datasheet K/W N·m (lbf · in) 280 Case style °C g TO-209AB (TO-93) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.016 0.012 120° 0.019 0.020 90° 0.025 0.027 60° 0.036 0.037 30° 0.060 0.060 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94367 Revision: 29-Apr-08 For technical questions, contact: [email protected] www.vishay.com 3 ST173SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 175 A 130 130 120 110 Ø Conduction angle 100 30 °C 60 °C 90 90 °C 180 °C Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) ST173S Series RthJC (DC) = 0.105 K/W ST173S Series RthJC (DC) = 0.105 K/W 120 110 Ø 100 Conduction period 90 90° 80 30° 120 °C DC 120° 80 70 0 20 40 60 80 100 120 140 160 180 Average On-State Current (A) 80 40 0 160 120 200 240 280 Average On-State Current (A) Fig. 2 - Current Ratings Characteristics Fig. 1 - Current Ratings Characteristics 350 0.3 200 R -Δ 0 W ST173S Series TJ = 125 °C K/ 50 08 Conduction angle 0. 100 = Ø 250 SA 150 0. 16 0.2 K/W K/ W W 200 R th RMS limit 300 K/ 250 1 300 0. 180° 120° 90° 60° 30° Maximum Average On-State Power Loss (W) 350 Maximum Average On-State Power Loss (W) 180° 60° K/W 0.4 K/W 0.5 K/W 0.8 K /W 150 100 1.2 K/W 50 0 0 20 40 60 80 50 25 100 120 140 160 180 75 100 125 Average On-State Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 3 - On-State Power Loss Characteristics 500 500 90° 30° 400 180° DC 60° 300 RMS limit 200 Ø Conduction period 100 ST173S Series TJ = 125 °C Maximum Average On-State Power Loss (W) Maximum Average On-State Power Loss (W) 120° R 400 th SA 0.1 = 0. 8 K/ W 0.1 6 0.2 K/W K/W 0.3 K/W 0.4 K 0.5 K /W /W 0.8 K/W 1.2 K/W 300 200 100 K/ W -Δ R 0 0 0 40 80 120 160 200 240 Average On-State Current (A) 280 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 94367 Revision: 29-Apr-08 ST173SPbF Series Inverter Grade Thyristors (Stud Version), 175 A 1 4500 At any rated load condition and with rated VRRM applied following surge. Transient Thermal Impedance ZthJC (K/W) Peak Half Sine Wave On-State Current (A) Vishay High Power Products Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 4000 3500 3000 2500 Steady state value RthJC = 0.105 K/W (DC operation) 0.1 0.01 ST173S Series ST173S Series 0.001 0.001 2000 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 3000 2500 Qrr - Maximum Reverse Recovery Charge (µC) Peak Half Sine Wave On-State Current (A) 4000 2000 10 A 00 =5 A I TM 00 =3 I TM 0A = 20 I TM ST173S Series TJ = 125 °C 200 150 I TM = 100 A 100 ITM = 50 A 50 ST173S Series 1500 0.01 0 0.1 1 0 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 20 40 60 80 100 dI/dt - Rate of Fall of On-State Current (A/µs) Fig. 9 - Reverse Recovered Current Characteristics 10 000 160 ST173S Series ITM = 500 A ITM = 300 A ITM = 200 A ITM = 100 A ITM = 50 A 140 Irr - Maximum Reverse Recovery Current (A) Instantaneous On-State Current (A) 1 250 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. 3500 0.1 Fig. 8 - Thermal Impedance ZthJC Characteristics 5000 4500 0.01 Square Wave Pulse Duration (s) 1000 TJ = 125 °C TJ = 25 °C 120 100 80 60 40 ST173S Series TJ = 125 °C 20 100 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 80 100 Instantaneous On-State Voltage (V) dI/dt - Rate of Fall of On-State Current (A/µs) Fig. 7 - On-State Voltage Drop Characteristics Fig. 10 - Reverse Recovery Current Characteristics Document Number: 94367 Revision: 29-Apr-08 For technical questions, contact: [email protected] www.vishay.com 5 ST173SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 175 A Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 200 500 400 1000 1000 100 50 Hz 1500 2000 2500 3000 ST173S Series Sinusoidal pulse TC = 60 °C tp 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 100 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 100 500 400 200 1000 1000 50 Hz 1500 2000 ST173S Series Sinusoidal pulse TC = 85 °C 2500 tp 3000 100 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 500 1000 1000 1500 2500 50 Hz 400 200 100 2000 3000 100 5000 tp ST173S Series Trapezoidal pulse TC = 60 °C dI/dt = 50 A/µs Peak On-State Current (A) Peak On-State Current (A) 10 000 10 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 500 50 Hz 200 100 1000 1500 2000 2500 100 400 3000 5000 ST173S Series Trapezoidal pulse TC = 85 °C dI/dt = 50 A/µs tp 10 10 100 1000 10 000 10 100 Pulse Basewidth (µs) 1000 10 000 Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 500 400 200 50 Hz 100 1000 1500 5000 100 2000 2500 10 000 tp ST173S Series Trapezoidal pulse TC = 60 °C dI/dt = 100 A/µs 10 10 000 Peak On-State Current (A) Peak On-State Current (A) 10 000 Snubber circuit Rs = 47 Ω Cs = 0.22 µF VD = 80 % VDRM 1000 2000 100 500 1000 1500 400 200 100 50 Hz 2500 5000 10 000 tp ST173S Series Trapezoidal pulse TC = 85 °C dI/dt = 100 A/µs 10 10 100 1000 10 000 10 Pulse Basewidth (µs) 100 1000 10 000 Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94367 Revision: 29-Apr-08 ST173SPbF Series Inverter Grade Thyristors (Stud Version), 175 A 100 000 10 000 Peak On-State Current (A) Peak On-State Current (A) 100 000 Vishay High Power Products 20 joules per pulse 4 7.5 2 1 1000 0.5 0.3 0.2 0.1 100 ST173S Series Sinusoidal pulse tp ST173S Series Rectangular pulse dI/dt = 50 A/µs 10 000 20 joules per pulse 5 10 2 3 1000 1 0.4 0.5 0.3 0.2 100 0.1 tp 10 10 10 100 1000 10 10 000 100 1000 10 000 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-State Energy Power Loss Characteristics 10 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; tr ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω tr ≤ 1 µs IGD 0.1 0.001 0.01 TJ = 40 °C VGD tp = 20 ms tp = 10 ms tp = 5 ms tp = 3.3 ms (b) TJ = 25 °C 1 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, (a) TJ = 125 °C Instantaneous Gate Voltage (V) 100 (1) Device: ST173S Series 0.1 (2) (3) (4) Frequency limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics Document Number: 94367 Revision: 29-Apr-08 For technical questions, contact: [email protected] www.vishay.com 7 ST173SPbF Series Vishay High Power Products Inverter Grade Thyristors (Stud Version), 175 A ORDERING INFORMATION TABLE Device code ST 17 3 S 12 P F K 0 - PbF 1 2 3 4 5 6 7 8 9 10 11 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn-off 4 - S = Compression bonding stud 5 - Voltage code x 100 = VRRM (see Voltage Ratings table) 6 - P = Stud base 3/4" 16UNF-2A M = Stud base metric threads M16 x 1.5 7 - Reapplied dV/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet terminals (gate and aux. cathode leads) 1 = Fast-on terminals (gate and aux. cathode leads) dV/dt - tq combinations available dV/dt (V/µs) 15 18 tq (µs) 20 25 30 20 CL CP CK CJ - 50 DP DK DJ DH 100 EP EK EJ EH 200 FP* FK* FJ FH 400 HK HJ HH * Standard part number. All other types available only on request. 2 = Flag terminals (for cathode and gate terminals) 10 - 11 - Critical dV/dt: None = 500 V/µs (standard value) L = 1000 V/µs (special selection) Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 8 http://www.vishay.com/doc?95079 For technical questions, contact: [email protected] Document Number: 94367 Revision: 29-Apr-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1