isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB720 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SD760 APPLICATIONS ·Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT -200 V -200 V -5.0 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A PC Total Power Dissipation@ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB720 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 -200 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V ICBO Collector Cutoff Current VCB= -200V; IE= 0 -10 μA IEBO Emitter Cutoff Current -10 μA hFE DC Current Gain fT CONDITIONS A B 35-70 60-120 n c . i m e s c s i . w w w Current-Gain—Bandwidth Product hFE Classifications B TYP. VEB= -3.0V; IC=0 IC= -150mA; VCE= -5V IC= -100mA; VCE= -10V C 100-200 isc Website：www.iscsemi.cn MIN 2 35 MAX UNIT 200 100 MHz