isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB696 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SD732 APPLICATIONS ·Designed for AF power amplifier applications. ·Recommended for output stage of 60W power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A ICM Emitter Current-Peak -12 A PC Collector Power Dissipation @TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -40~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB696 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; RBE= ∞ -120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA; IE= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 mA hFE DC Current Gain IC= -1A; VCE= -5V Current-Gain—Bandwidth Product IC= -1A; VCE= -5V fT CONDITIONS hFE Classifications C D E F 40-80 60-120 100-200 160-320 isc Website：www.iscsemi.cn MIN TYP. MAX -0.6 B 40 UNIT V 320 15 MHz