isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1832 DESCRIPTION ·High Collector Current:: IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A ·Wide Area of Safe Operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A PC Total Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1832 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 10 μA hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz Current-Gain—Bandwidth Product IE= -0.5A; VCE= 5V fT CONDITIONS B E F 60-120 100-200 160-320 isc Website：www.iscsemi.cn TYP. B B hFE Classifications D MIN 2 60 MAX UNIT 320 130 pF 8 MHz