isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD732 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V (Min) ·High Current Capability ·Complement to Type 2SB696 APPLICATIONS ·Designed for AF power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage MAX UNIT s c s i . w w w 150 V 120 V 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A PC Collector Power Dissipation @TC=25℃ 80 W Tj Junction Temperature 150 ℃ -40~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD732 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain m e s isc fT CONDITIONS w. w w hFE Classifications C D E F 40-80 60-120 100-200 160-320 isc Website：www.iscsemi.cn VEB= 4V; IC= 0 IC= 1A; VCE= 5V IC= 1A; VCE= 5V TYP. MAX 0.6 B VCB= 80V; IE= 0 Current-Gain—Bandwidth Product MIN n c . i 40 UNIT V 1.5 V 0.1 mA 0.1 mA 320 15 MHz