isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1485 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1054 APPLICATIONS ·Designed for high power amplifier applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE w w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO UNIT 100 V 100 V Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A Collector Power Dissipation @ Ta=25℃ 3 PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 60 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1485 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 2.0 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V 1.8 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 50 μA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 50 μA hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gain COB Output Capacitance fT CONDITIONS hFE-2 Classifications R Q 40-80 60-120 40 200 20 IE= 0; VCB= 10V; f= 1.0MHz 170 pF IC= 0.5A; VCE= 5V 20 MHz P 100-200 isc Website：www.iscsemi.cn 20 n c . i m e s c s i . w w w TYP. B IC= 3A; VCE= 5V Current-Gain—Bandwidth Product MIN 2