SAVANTIC 2SC3387

SavantIC Semiconductor
Product Specification
2SC3387
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
APPLICATIONS
·For horizontal deflection output
applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1200
V
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SC3387
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=4A ;IB=0.8A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
µA
IEBO
Emitter cut-off current
VEB=4V; IC=0
10
µA
hFE
DC current gain
IC=0.3A ; VCE=5V
2
MIN
TYP.
MAX
UNIT
500
V
6
V
15
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SC3387