SavantIC Semiconductor Product Specification 2SD2296 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High breakdown voltage APPLICATIONS ·For color TV horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICM Collector current -peak 6 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD2296 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=: V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.2A 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=1.2A 1.5 V ICES Collector cut-off current VCE=1500V ;RBE=0 0.5 mA hFE DC current gain IC=1A ; VCE=5V 800 V 6 V 8 30 Switching times tf Fall time IC=4.0A;IB1=0.8A;IB2=-1.5A 2 0.8 µs SavantIC Semiconductor Product Specification Silicon Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SD2296