SAVANTIC 2SC2027

SavantIC Semiconductor
Product Specification
2SC2027
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·For high voltage ,power switching and
TV horizontal output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
5
V
5
A
7.5
A
50
W
IC
Collector current
ICM
Collector current-peak
PT
Total power dissipation
Tj
Junction temperature
175
Tstg
Storage temperature
-65~200
TC=25
SavantIC Semiconductor
Product Specification
2SC2027
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A; IB=0
800
V
V(BR)EBO
Emitter-base breakdown votage
IE=1mA; IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=4.0 A;IB=1.3 A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4.0 A;IB=1.3 A
1.5
V
ICBO
Collector cut-off current
VCB=600V;IE=0
10
µA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
µA
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=5V
2
MIN
8
2.25
TYP.
MAX
36
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
2SC2027