Inchange Semiconductor Product Specification 2SC2934 Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High VCEO ·Low COB APPLICATIONS ·For TV video output amplification PINNING（see Fig.2） PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7 V 0.2 A 12.5 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2934 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 1.5 V VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5m A V(BR)CBO Collector-base breakdown voltage IC=10μA;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=100μA; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 7 V ICBO Collector cut-off current VCB=200V;IE=0 0.1 μA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 μA hFE DC current gain IC=50mA ; VCE=10V Transition frequency IC=20mA ; VCE=20V fT 2 50 300 80 MHz Inchange Semiconductor Product Specification 2SC2934 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3