ISC 2SC1161

Inchange Semiconductor
Product Specification
2SC1161
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
APPLICATIONS
·For low frequency high voltage power
amplifier TV vertical deflection output
applications.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
6
V
1
A
15
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1161
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=50mA ;IB=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=500mA; IB=50mA
1.5
V
VBE sat
Base-emitter saturation voltage
IC=500mA; IB=50mA
2.0
V
ICBO
Collector cut-off current
VCB=120V; IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=6V; IC=0
1.0
μA
hFE
DC current gain
IC=200mA ; VCE=5V
30
Transition frequency
IC=200mA ; VCE=10V
5
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
200
MHz
Inchange Semiconductor
Product Specification
2SC1161
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3