SavantIC Semiconductor Product Specification 2SC2429 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·High speed switching ·Converters and inverters PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-Peak 20 A IB Base current 5 A PT Total power dissipation 150 W Tj Junction temperature 175 Tstg Storage temperature -65~175 TC=25 SavantIC Semiconductor Product Specification 2SC2429 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=1A ; RBE=9 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=10A; IB=2A 0.45 1.0 V VBEsat Base-emitter saturation voltage IC=10A; IB=2A 1.2 2.0 V ICBO Collector cut-off current VCB=450V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=10A ; VCE=5V Transition frequency IC=2A ; VCE=10V,f=10MHz 35 MHz Collector output capacitance IE=0 ; VCB=10V;f=1MHz 230 pF fT COB 10 15 40 Switching times tr tstg tf Rise time Storage time VCC=150V,IC=10A IB1=-IB2=2A Fall time 2 0.15 0.5 µs 1.20 2.5 µs 0.10 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC2429