SavantIC Semiconductor Product Specification 2SC4533 Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High speed switching ·High VCBO ·Wide area of safe operation APPLICATIONS ·For high breakdown voltage ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 3 A ICM Collector current-Peak 6 A IB Base current 1.2 A PC Collector power dissipation TC=25 30 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC4533 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA , IB=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V 10 hFE-2 DC current gain IC=1.2A ; VCE=2V 8 Transition frequency IC=0.2A ; VCE=10V;f=1MHz fT CONDITIONS MIN TYP. MAX 400 UNIT V 40 10 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=1.5A; IB1=0.15A IB2=-0.3A;VCC=200V 2 1.0 µs 3.0 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SC4533 SavantIC Semiconductor Product Specification 2SC4533 Silicon NPN Power Transistors 4