ISC 2SC2429

Inchange Semiconductor
Product Specification
2SC2429
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·High speed switching
·Converters and inverters
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VCBO
Collector-base voltage
Open emitter
450
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
15
A
ICM
Collector current-Peak
20
A
IB
Base current
5
A
PT
Total power dissipation
150
W
Tj
Junction temperature
175
℃
Tstg
Storage temperature
-65~175
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2429
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=1A ; RBE=∞
400
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=2A
0.45
1.0
V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=2A
1.2
2.0
V
ICBO
Collector cut-off current
VCB=450V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=10A ; VCE=5V
Transition frequency
IC=2A ; VCE=10V,f=10MHz
35
MHz
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
230
pF
fT
COB
10
15
40
Switching times
tr
tstg
tf
Rise time
Storage time
VCC=150V,IC=10A
IB1=-IB2=2A
Fall time
2
0.15
0.5
μs
1.20
2.5
μs
0.10
0.3
μs
Inchange Semiconductor
Product Specification
2SC2429
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3