Inchange Semiconductor Product Specification 2SB1344 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・Low saturation voltage ・DARLINGTON ・Complement to type 2SD2025 APPLICATIONS ・For low frequency power amplifier and power driver applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 导体 半 电 固 Fig.1 simplified outline (TO-220Fa) and symbol D N O IC Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER R O T UC M E S GE VALUE UNIT Open emitter -100 V Collector -emitter voltage Open base -100 V Emitter-base voltage Open collector -7 V N A H C Collector-base voltage IN CONDITIONS IC Collector current -8 A ICM Collector current-peak -10 A PC Collector power dissipation Ta=25℃ 2 W TC=25℃ 30 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1344 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-50μA; IE=0 -100 V VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-6mA ICBO Collector cut-off current IEBO hFE fT COB CONDITIONS MIN TYP. UNIT -1.5 V VCB=-100V; IE=0 -10 μA Emitter cut-off current VEB=-5V; IC=0 -3.0 mA DC current gain IC=-2A ; VCE=-3V 体 半导 -1.0 MAX 1000 Transition frequency IC=-0.5A ; VCE=-5V Output capacitance IE=0 ; VCB=-10V;f=1MHz 固电 G N A CH IN R O T UC OND IC M E ES 2 20000 12 MHz 90 pF Inchange Semiconductor Product Specification 2SB1344 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3