SavantIC Semiconductor Product Specification 2SD1888 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·DARLINGTON ·Complement to type 2SB1339 ·High DC current gain APPLICATIONS ·Low frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 120 V VCEO Collector -emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 6 A ICM Collector current-peak 10 A PC Collector power dissipation TC=25 40 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1888 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50µA; IE=0 120 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA;IB=0 120 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=6mA 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=2A ; VCE=3V fT Transition frequency IE=-0.2A ; VCE=5V;f=10MHz 40 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 50 pF 2 2000 20000 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SD1888