VISHAY 16TTS08STRLPBF

16TTS..S High Voltage Series
Vishay High Power Products
Surface Mountable Phase
Control SCR, 16 A
DESCRIPTION/FEATURES
2
Anode
D2PAK
1
Cathode
The 16TTS..S High Voltage Series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
3
Gate
PRODUCT SUMMARY
VT at 10 A
This product has been designed and qualified for industrial
level.
< 1.4 V
ITSM
200 A
VRRM
800/1200 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 µm) copper
2.5
3.5
Aluminum IMS, RthCA = 15 °C/W
6.3
9.5
Aluminum IMS with heatsink, RthCA = 5 °C/W
14.0
18.5
UNITS
A
Note
• TA = 55 °C, TJ = 125 °C, footprint 300 mm2
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
IRMS
VALUES
10
16
VRRM/VDRM
UNITS
A
800/1200
V
200
A
1.4
V
dV/dt
500
V/µs
dI/dt
150
A/µs
- 40 to 125
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM PEAK
DIRECT VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
16TTS08S
800
800
16TTS12S
1200
1200
ITSM
VT
10 A, TJ = 25 °C
TJ
VOLTAGE RATINGS
PART NUMBER
Document Number: 93698
Revision: 04-Jul-08
For technical questions, contact: [email protected]
10
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16TTS..S High Voltage Series
Vishay High Power Products Surface Mountable Phase
Control SCR, 16 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle,
non-repetitive surge current
ITSM
TEST CONDITIONS
TC = 98 °C, 180° conduction, half sine wave
10 ms sine pulse, rated VRRM applied
170
10 ms sine pulse, no voltage reapplied
200
144
10 ms sine pulse, no voltage reapplied
200
2000
Maximum I2√t for fusing
I2√t
t = 0.1 to 10 ms, no voltage reapplied
Maximum on-state voltage drop
VTM
10 A, TJ = 25 °C
rt
Threshold voltage
VT(TO)
Maximum reverse and direct leakage current
IRM/IDM
A
10 ms sine pulse, rated VRRM applied
I2 t
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IH
Anode supply = 6 V, resistive load, initial IT = 1 A
Maximum latching current
IL
Anode supply = 6 V, resistive load
A2s
A2√s
1.4
V
24.0
mΩ
1.1
V
0.5
VR = Rated VRRM/VDRM
Holding current
UNITS
10
16
Maximum I2t for fusing
On-state slope resistance
VALUES
TYP. MAX.
10
-
100
mA
200
Maximum rate of rise of off-state voltage
dV/dt
500
V/µs
Maximum rate of rise of turned-on current
dI/dt
150
A/µs
VALUES
UNITS
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
PGM
8.0
Maximum average gate power
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum peak gate power
Maximum required DC gate current to trigger
Maximum required DC gate
voltage to trigger
IGT
VGT
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Anode supply = 6 V, resistive load, TJ = - 10 °C
90
Anode supply = 6 V, resistive load, TJ = 25 °C
60
Anode supply = 6 V, resistive load, TJ = 125 °C
35
Anode supply = 6 V, resistive load, TJ = - 10 °C
3.0
Anode supply = 6 V, resistive load, TJ = 25 °C
2.0
Anode supply = 6 V, resistive load, TJ = 125 °C
1.0
TJ = 125 °C, VDRM = Rated value
W
mA
V
0.25
2.0
mA
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
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TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
For technical questions, contact: [email protected]
VALUES
UNITS
0.9
4
µs
110
Document Number: 93698
Revision: 04-Jul-08
16TTS..S High Voltage Series
Surface Mountable Phase
Control SCR, 16 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Soldering temperature
SYMBOL
TEST CONDITIONS
TJ, TStg
TS
VALUES
- 40 to 125
For 10 s (1.6 mm from case)
240
Maximum thermal resistance,
junction to case
RthJC
DC operation
1.3
Typical thermal resistance,
junction to ambient
RthJA
PCB mount (1)
40
°C
°C/W
Approximate weight
Marking device
UNITS
Case style D2PAK (SMD-220)
2
g
0.07
oz.
16TTS08S
16TTS12S
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994.
Document Number: 93698
Revision: 04-Jul-08
For technical questions, contact: [email protected]
www.vishay.com
3
16TTS..S High Voltage Series
Vishay High Power Products Surface Mountable Phase
Maximum Allowable Case Temperature (°C)
125
16TTS.. Series
R thJC (DC) = 1.3 °C/W
120
115
Conduction Angle
110
105
100
30°
60°
95
90°
120°
180°
90
0
2
4
6
8
10
12
Max imum Average On-state Power Loss (W)
Control SCR, 16 A
25
DC
180°
120°
90°
60°
30°
20
15
RMS Limit
10
Conduction Period
5
16TTS.. Series
TJ = 125°C
0
0
2
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
125
16TTS.. Series
R thJC (DC) = 1.3 °C/W
115
Conduction Period
110
105
100
30°
60°
90°
120°
95
180° DC
90
0
2
4
6
8
10
12
14
180°
120°
90°
60°
30°
RMS Limit
10
8
Conduction Angle
6
16TTS.. Series
T J = 125°C
4
2
0
0
1
2
3
4
5
6
7
8
9
10
12
14
16
18
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
160
140
120
100
16TTS..Series
80
1
10
100
10 11
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Max imum Average On-state Power Loss (W)
18
12
8
Number Of Equal Amplitude Half C ycle Current Pulses (N)
Fig. 2 - Current Rating Characteristics
14
180
16
Average On-state Current (A)
16
6
Fig. 4 - On-State Power Loss Characteristics
Fig. 1 - Current Rating Characteristics
120
4
Average On-state Current (A)
Average On-state Current (A)
200
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
180
160
140
120
100
16TTS.. Series
80
0.01
0.1
1
Average On-state Current (A)
Pulse Train Duration (s)
Fig. 3 - On-State Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
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For technical questions, contact: [email protected]
Document Number: 93698
Revision: 04-Jul-08
16TTS..S High Voltage Series
Surface Mountable Phase
Control SCR, 16 A
Vishay High Power Products
1000
Instantaneous On-state Current (A)
16TTS.. Series
100
10
T
J
= 25°C
TJ = 125°C
1
0
1
2
3
4
5
Instantaneous On-st ate Voltage (V)
Transient Thermal Impedance Z thJC (°C/W)
Fig. 7 - On-State Voltage Drop Characteristics
10
Steady State Value
(DC Operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Single Pulse
16TTS.. Series
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
VGD
IGD
0.1
0.001
TJ = -10 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
16TTS.. Series
0.01
0.1
(3)
(2)
(1)
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Document Number: 93698
Revision: 04-Jul-08
For technical questions, contact: [email protected]
www.vishay.com
5
16TTS..S High Voltage Series
Vishay High Power Products Surface Mountable Phase
Control SCR, 16 A
ORDERING INFORMATION TABLE
Device code
16
T
T
S
12
S
TRL
-
1
2
3
4
5
6
7
8
1
-
2
-
Current rating
Circuit configuration:
T = Single thyristor
3
-
Package:
T = TO-220AC
4
-
Type of silicon:
S = Standard recovery rectifier
5
-
Voltage rating: Voltage code x 100 = VRRM
6
-
S = TO-220 D2PAK (SMD-220) version
7
-
08 = 800 V
12 = 1200 V
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
8
-
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95046
Part marking information
http://www.vishay.com/doc?95054
Packaging information
http://www.vishay.com/doc?95032
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For technical questions, contact: [email protected]
Document Number: 93698
Revision: 04-Jul-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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