40TPS...APbF/40TPS...PbF High Voltage Series Vishay High Power Products Phase Control SCR, 35 A DESCRIPTION/FEATURES 2 (A) TO-247AC 1 (K) (G) 3 PRODUCT SUMMARY VT at 40 A < 1.45 V ITSM 500 A VRRM 800/1200 V The 40TPS...APbF High Voltage Series of silicon Pb-free controlled rectifiers are specifically designed for Available medium power switching and phase control RoHS* applications. The glass passivation technology COMPLIANT used has reliable operation up to 125 °C junction temperature. Low Igt parts available. Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix). MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES Sinusoidal waveform 35 A IRMS 55 VRRM/VDRM ITSM VT UNITS 40 A, TJ = 25 °C 800/1200 V 500 A 1.45 V dV/dt 1000 V/µs dI/dt 100 A/µs - 40 to 125 °C VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 °C mA 40TPS08APbF 800 900 40TPS12APbF 1200 1300 40TPS08PbF 800 900 40TPS12PbF 1200 1300 TJ VOLTAGE RATINGS PART NUMBER 10 * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94388 Revision: 12-Sep-08 For technical questions, contact: [email protected] www.vishay.com 1 40TPS...APbF/40TPS...PbF High Voltage Series Vishay High Power Products Phase Control SCR, 35 A ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum continuous RMS on-state current as AC switch TEST CONDITIONS VALUES TC = 79 °C, 180° conduction half sine wave IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I2 t Maximum I2√t for fusing I2√t 55 10 ms sine pulse, no voltage reapplied 600 Initial TJ = TJ maximum 1250 10 ms sine pulse, no voltage reapplied 1760 t = 0.1 to 10 ms, no voltage reapplied 12 500 Low level value of threshold voltage VT(TO)1 1.02 High level value of threshold voltage VT(TO)2 1.23 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 A 500 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, rated VRRM applied UNITS 35 TJ = 125 °C 9.74 7.50 A2s A2√s V mΩ Maximum peak on-state voltage VTM 110 A, TJ = 25 °C 1.85 V Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 100 A/µs Maximum holding current IH 150 Maximum latching current IL 300 Maximum reverse and direct leakage current Maximum rate of rise of off-state voltage 40TPS08 Maximum rate of rise of off-state voltage 40TPS12 IRRM/IDRM TJ = 25 °C TJ = 125 °C 0.5 VR = Rated VRRM/VDRM mA 10 dV/dt TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open SYMBOL TEST CONDITIONS 500 1000 V/µs TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage VALUES 10 PG(AV) 2.5 IGM 2.5 A - VGM 10 V TJ = - 40 °C Maximum required DC gate voltage to trigger VGT Maximum required DC gate current to trigger IGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD www.vishay.com 2 UNITS PGM TJ = 25 °C W 4.0 Anode supply = 6 V resistive load 2.5 TJ = 125 °C 1.7 TJ = - 40 °C 270 TJ = 25 °C 150 TJ = 125 °C 80 TJ = 25 °C, for 40TPS08APbF and 40TPS12APbF 40 TJ = 125 °C, VDRM = Rated value For technical questions, contact: [email protected] V mA 0.25 V 6 mA Document Number: 94388 Revision: 12-Sep-08 40TPS...APbF/40TPS...PbF High Voltage Series Phase Control SCR, 35 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Maximum thermal resistance, case to heatsink RthCS TEST CONDITIONS UNITS - 40 to 125 °C 0.6 DC operation °C/W 40 Mounting surface, smooth and greased Approximate weight Mounting torque VALUES 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) 40TPS08A Marking device Case style TO-247AC 40TPS12A 40TPS08 40TPS12 Document Number: 94388 Revision: 12-Sep-08 For technical questions, contact: [email protected] www.vishay.com 3 40TPS...APbF/40TPS...PbF High Voltage Series 130 40TPS.. Series R thJC (DC) = 0.6 °C/ W 120 110 Conduction Angle 100 30° 60° 90° 90 120° 180° 80 70 0 10 20 30 Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (°C) Vishay High Power Products Phase Control SCR, 35 A 100 60° 90° 120° 180° 80 DC 70 0 10 20 30 40 50 60 Average On-state Current (A) RMS Limit 30 20 Conduction Angle 40TPS.. Series TJ= 125°C 10 0 0 5 10 15 20 25 30 35 40TPS.. Series TJ = 125°C 10 0 10 40 550 30 40 50 60 At Any Ra ted Load Condition And With Rated V RRM App lied Following Surge. Initia l TJ= 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 500 450 400 350 300 40TPS.. Series 250 10 600 100 Maximum Non Rep etitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapp lied Rated VRRM Reapp lied 550 500 450 400 350 300 40TPS.. Series 250 0.01 0.1 1 Pulse Tra in Duration (s) Avera ge On-sta te Current (A) Fig. 3 - On-State Power Loss Characteristics www.vishay.com 4 20 Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wa ve On-state Current (A) Maximum Avera ge On-state Power Loss (W) 40 Conduction Period 20 Number Of Equal Amplitude Half Cycle Current Pulses (N) 60 50 30 1 Fig. 2 - Current Rating Characteristics 180° 120° 90° 60° 30° 40 RMS Limit 0 Peak Half Sine Wa ve On-state Current (A) Maximum Allowable Case Temperature (°C) Conduction Period 90 50 Avera ge On-sta te Current (A) 110 30° 60 Fig. 4 - On-State Power Loss Characteristics 40TPS.. Series RthJC (DC) = 0.6 °C/ W 120 DC 180° 120° 90° 60° 30° 70 40 Average On-state Current (A) Fig. 1 - Current Rating Characteristics 130 80 Fig. 6 - Maximum Non-Repetitive Surge Current For technical questions, contact: [email protected] Document Number: 94388 Revision: 12-Sep-08 40TPS...APbF/40TPS...PbF High Voltage Series Phase Control SCR, 35 A Vishay High Power Products Instanta neous On-state Current (A) 100 10 TJ= 25°C TJ= 125°C 40TPS.. Series 1 0.5 1 1.5 2 Instantaneous On-state Voltag e (V) Fig. 7 - On-State Voltage Drop Characteristics 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for <= 30% rated di/dt: 10 V, 65 ohms tr = 1 µs, tp >= 6 µs (1) PGM = 100 W, tp = 500µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) IGD 0.1 0.001 TJ = 25 °C VGD TJ = -40 °C 1 TJ = 125 °C Instantaneous Gate Voltage (V) 100 (4) 40TPS..A Series 0.01 (3) (2) (1) Frequency Limited by PG(AV) 0.1 1 10 Instantaneous Gate Current (A) 100 1000 Transient Thermal Impedance Z thJC (°C/W) Fig. 8 - Gate Characteristics 1 0.1 Steady State Value (DC Operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 40TPS.. Series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 9 - Thermal Impedance ZthJC Characteristics Document Number: 94388 Revision: 12-Sep-08 For technical questions, contact: [email protected] www.vishay.com 5 40TPS...APbF/40TPS...PbF High Voltage Series Vishay High Power Products Phase Control SCR, 35 A ORDERING INFORMATION TABLE Device code 40 T P S 12 A PbF 1 2 3 4 5 6 7 1 - Current rating (40 = 40 A) 2 - Circuit configuration: T = Thyristor 3 - Package: P = TO-247 4 - Type of silicon: S = Standard recovery rectifier 5 - 6 - 08 = 800 V 12 = 1200 V Voltage ratings A = Low Igt selection 40 mA maximum None = Standard Igt selection 7 - None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95223 Part marking information http://www.vishay.com/doc?95226 www.vishay.com 6 For technical questions, contact: [email protected] Document Number: 94388 Revision: 12-Sep-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1