2SJ618 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSⅤ) 2SJ618 High-Power Amplifier Applications Unit: mm 20.5 ± 0.5 2.0 ± 0.3 1.0 ＋0.3 －0.25 Rating Unit Drain-source voltage VDSS −180 V Gate-source voltage VGSS ±20 V ＋0.3 0.6 －0.1 1.8 MAX. Symbol 1 3 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE DC (Note 1) ID −10 A Pulse (Note 1) IDP −30 A JEDEC Power dissipation (Tc = 25°C) PD 130 W JEITA Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Drain current 2 2.8 Characteristics 5.45 ± 0.2 4.8 MAX. 5.45 ± 0.2 Absolute Maximum Ratings (Ta = 25°C) 20.0 ± 0.3 1.0 2.0 9.0 Complementary to 2SK3497 2.0 • 3.3 MAX. High breakdown voltage: VDSS = −180 V 4.5 Ф3.2 ± 0.2 15.9 MAX. • ⎯ SC-67 TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 0.96 °C / W Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W 2 1 3 1 2009-09-29 2SJ618 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Drain cut−off current IDSS VDS = −180 V, VGS = 0 V ⎯ ⎯ −100 μA Gate leakage current IGSS VDS = 0, VGS = ±12 V ⎯ ⎯ ±10 μA Drain-source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 −180 ⎯ ⎯ V Drain-source saturation voltage VDS (ON) ID = −5 A, VGS = −7 V ⎯ ⎯ −1.85 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA −1.1 ⎯ −2.1 V Forward transfer admittance |Yfs| VDS = −10 V, ID = −5 A 6.0 12.0 ⎯ S Input capacitance Ciss ⎯ 2300 ⎯ Output capacitance Coss ⎯ 330 ⎯ Reverse transfer capacitance Crss ⎯ 65 ⎯ VDS = −30 V, VGS = 0, f = 1 MHz pF This transistor is the electrostatic-sensitive device. Plese handle with caution. Marking TOSHIBA J618 Part No. (or abbreviation code) Lot No. Note 3 Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SJ618 ID – VDS Common source Tc = 25°C Pulse test Drain current ID (A) −16 ID – VGS −10 Common source VDS = −10V Pulse test −4 −8 Drain current ID (A) −20 −3.5 −12 −8 −3 −6 −4 Tc = 100°C 25 −2 −4 −55 VGS = −2.5 V 0 −2 0 −4 −6 Drain-source voltage −8 0 −10 −2 −1 0 VDS (V) Gate-source voltage ⎪Yfs⎪ – ID Drain−source saturation voltage VDS (ON) (V) Common source VDS = −10 V Pulse test (S) Forward transfer admittance ⎪Yfs⎪ 5 Tc = −55 °C 100 25 1 0.1 −0.1 −1 −2.5 ID = −10 A 3 −5 2 1 −40 0 40 Case temperature Tc 80 120 160 (°C) PD – Tc Capacitance – VDS Drain power dissipation PD (W) 150 Ciss (pF) VGS (V) 4 0 −80 −10 10000 Capacitance C −5 Common source VGS = −7 V Pulse test Drain current ID (A) 1000 Coss 100 Crss Common source VGS = 0 V f = 1 MHZ Tc = 25°C 10 0.1 −4 VDS (ON) – Tc 100 10 −3 1 Drain-source voltage 10 120 90 60 30 0 100 VDS (V) 0 40 80 Case temperature Tc 3 120 160 (°C) 2009-09-29 2SJ618 Safe operating area −100 Drain current ID (A) ID MAX. (pulsed) * −10 ID MAX. (continuous) t = 1 ms* DC OPERATION Tc=25℃ −1 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.1 −1 −10 Drain-source voltage VDSS MAX. −100 −100 VDS (V) 4 2009-09-29 2SJ618 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2009-09-29