2SK3994 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK3994 Switching Regulator, DC/DC Converter Applications Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 90 mΩ (typ.) z High forward transfer admittance : |Yfs| = 10 S (typ.) Unit: mm z Low leakage current : IDSS = 100 μA (max) (VDS = 250 V) z Enhancement mode : Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 250 V Drain−gate voltage (RGS = 20 kΩ) VDGR 250 V Gate−source voltage VGSS ±30 V (Note 1) ID 20 A Pulse (Note 1) IDP 80 A Drain power dissipation (Tc = 25°C) PD 45 W Single-pulse avalanche energy (Note 2) EAS 487 mJ Avalanche current IAR 20 A Repetitive avalanche energy (Note 3) EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C DC Drain current JEDEC — JEITA TOSHIBA SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 2.78 °C / W Thermal resistance, channel to ambient Rth (ch−a) 62.5 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 2.06 mH, RG = 25 Ω, IAR = 20 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 2SK3994 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate−source breakdown voltage Drain cutoff current Test Condition Min Typ. Max Unit IGSS VGS = ±25 V, VDS = 0 V — — ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 — — V IDSS VDS = 250 V, VGS = 0 V — — 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 250 — — V Vth VDS = 10 V, ID = 1 mA 3.0 — 5.0 V Drain−source ON-resistance RDS (ON) VGS = 10 V, ID = 10 A — 90 105 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 10 A 5 10 — S Input capacitance Ciss — 2090 — Reverse transfer capacitance Crss — 280 — Output capacitance Coss — 1000 — — 20 — — 40 — Rise time Turn-on time tr VDS = 10 V, VGS = 0 V, f = 1 MHz ton Switching time Fall time Turn-off time ID = 10 A VGS 10 V 0V RL = 12.5Ω Gate threshold voltage 4.7 Ω Drain−source breakdown voltage Symbol tf toff Total gate charge (gate−source plus gate−drain) Qg Gate−source charge Qgs Gate−drain (“Miller”) charge Qgd pF VOUT VDD ∼ − 125 V Duty < = 1%, tw = 10 μs VDD ≈ 200 V, VGS = 10 V, ID = 20 A ns — 10 — — 40 — — 45 — — 22 — — 23 — nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 20 A Pulse drain reverse current (Note 1) IDRP — — — 80 A Forward voltage (diode) VDSF IDR = 20 A, VGS = 0 V — — −1.5 V Reverse recovery time trr — 320 — ns Reverse recovery charge Qrr IDR = 20 A, VGS = 0 V dIDR / dt = 100 A / μs — 2.8 — μC Marking K3994 Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Part No. (or abbreviation code) Lot No. Please contact your TOSHIBA sales representative for details as to Note environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK3994 ID – VDS 50 15 10 Common source 9.5 Tc = 25°C Tc = 25°C 40 Pulse test 80 Pulse test 9 30 Drain current ID (A) Drain current ID (A) Common source ID – VDS 100 8.5 20 8 7.5 10 12 15 11 60 10 40 9 8 20 VGS = 7 V VGS = 7 V 0 0 2 4 6 Drain−source voltage 8 0 0 10 VDS (V) 4 8 12 Drain−source voltage ID – VGS 16 VDS (V) VDS – VGS 50 5 Common source Common source Pulse test 30 Drain−source voltage Drain current ID (A) VDS (V) VDS = 10 V 40 Tc = −55°C 20 100 10 25 0 0 4 8 12 Gate−source voltage 16 Tc = 25°C 4 Pulse test 3 ID = 20 A 2 10 1 5 0 0 20 VGS (V) 4 8 ⎪Yfs⎪ – ID 16 20 VGS (V) RDS (ON) – ID 1 VDS = 10 V Common source Tc = 25°C Pulse test Pulse test Drain-source ON-resistance RDS (ON) (mΩ) Common source (S) 12 Gate−source voltage 100 Forward transfer admittance ⎪Yfs⎪ 20 10 Tc = −55°C 100 25 1 0.1 0.1 1 10 0.1 15 0.01 1 100 Drain current ID (A) VGS = 10 V 10 100 Drain current ID (A) 3 2009-09-29 2SK3994 RDS (ON) – Tc IDR – VDS Common source VGS = 10 V Pulse test Common source Tc = 25°C (A) 10 5 0.18 ID = 20 A 0.12 0.06 Pulse test 100 10 VGS = 0 V 10 5 −40 0 40 80 120 1 0 160 3 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 Case temperature Tc (°C) Drain−source voltage Capacitance – VDS Vth – Tc 30000 6 Gate threshold voltage Ciss 1000 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 Crss 10 Drain−source voltage 100 1000 5 4 3 2 Common source 1 V DS = 10 V ID = 1 mA Pulse test 0 −80 −40 0 40 80 120 160 Case temperature Tc (°C) VDS (V) Dynamic input/output characteristics 250 VDS (V) 10 0.1 Coss Drain−source voltage Capacitance C (pF) Vth (V) 10000 100 VDS (V) 200 Common source ID = 20 A Tc = 25°C Pulse test VDS 150 16 12 VDD = 200 V 50 V 20 100 V 100 8 VGS 4 50 0 0 20 40 60 80 VGS (V) 0 −80 Gate−source voltage 0.24 1000 Drain reverse current IDR Drain-source ON-resistance RDS (ON) ( Ω) 0.3 0 100 Total gate charge Qg (nC) 4 2009-09-29 2SK3994 Safe operating area EAS – Tch 100 500 ＩＤ max (pulse) ＊ (mJ) １00μs * 1m s * ＩＤ max (continuous) ＊ ＩD （Ａ） Drain current Avalanche energy EAS 10 DC operation Tc=25 ℃ 1 0.1 ＊ Single nonrepetitive Ta=25℃ Curves must be derated linealy with increase in temperature. 400 300 200 100 0 25 50 Ｖ ＤＳＳ m ax． 75 100 Channel temperature (initial) 0.01 1 10 Drain-source voltage 100 125 150 Tch (°C) 1000 ＶＤＳ （Ｖ） 15 V BVDSS IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 50 V, L = 2.06 mH 5 Waveform Ε AS = ⎞ ⎛ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎟ ⎜B 2 − V VDSS DD ⎠ ⎝ 2009-09-29 2SK3994 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. 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Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. • Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. • Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29