2SJ360 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV) 2SJ360 High Speed, High current Switching Applications Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.55 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.) z Low leakage current z Enhancement mode : IDSS = −100 μA (max) (VDS = −60 V) : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS −60 V Drain−gate voltage (RGS = 20 k Ω) VDGR −60 V Gate−source voltage VGSS ±20 V (Note 1) ID −1 A Pulse (Note 1) IDP −4 A PD 0.5 W JEDEC JEITA Drain current DC Drain power dissipation Drain power dissipation PD 1.5 W Channel temperature (Note 2) Tch 150 °C Storage temperature range Tstg −55 to 150 °C Symbol Max Unit Rth (ch−a) 250 °C / W TOSHIBA ⎯ SC-62 2−5K1B Weight: 0.05 g (typ.) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2009-09-29 2SJ360 Marking Z Part No. (or abbreviation code) Note 4: A line to the right of a Lot No. identifies the indication of product Labels. Without a line: [[Pb]]/INCLUDES > MCV With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 8 Lot No. Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut−off current IDSS VDS = −60 V, VGS = 0 V ⎯ ⎯ −100 μA V (BR) DSS ID = −10 mA, VGS = 0 V −60 ⎯ ⎯ V Vth VDS = −10 V, ID = −1 mA −0.8 ⎯ −2.0 V VGS = −4 V, ID = −0.5 A ⎯ 0.86 1.2 VGS = −10 V, ID = −0.5 A ⎯ 0.55 0.73 VDS = −10 V, ID = −0.5 A 0.5 1.0 ⎯ ⎯ 155 ⎯ ⎯ 22 ⎯ ⎯ 75 ⎯ ⎯ 17 ⎯ ⎯ 20 ⎯ Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = −10 V, VGS = 0 V, f = 1 MHz tr VGS Switching time Fall time Turn−off time −10V ton tf toff Total gate charge (Gate−source plus gate−drain) Qg Gate−source charge Qgs Gate−drain (“miller”) charge Qgd RL = 60Ω 50Ω Turn−on time ID = −0.5A VOUT 0V VDD ≒ ≈ −30V ≤ Duty ≦1%, tw = 10μs VDD ≈ −48 V, VGS = −10 V, ID = −1 A Ω S pF ns ⎯ 20 ⎯ ⎯ 100 ⎯ ⎯ 6.5 ⎯ ⎯ 4.5 ⎯ ⎯ 2.0 ⎯ nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ −1 A Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ −4 A Forward voltage (diode) VDSF IDR = −1 A, VGS = 0 V ⎯ ⎯ 1.8 V Reverse recovery time trr ⎯ 50 ⎯ ns Reverse recovery charge Qrr IDR = −1 A, VGS = 0 V dIDR / dt = 50 A / μs ⎯ 45 ⎯ nC 2 2009-09-29 2SJ360 ID – VDS −4 −10 −4.5 −5 −8 −1.6 (A) −3 Drain current ID Drain current −0.6 −0.4 −0.2 −3.8 −10 −3.5 −6 (A) −0.8 Common source Ta = 25°C Pulse test ID – VDS −2.0 ID −1.0 −5 −6 −8 Common source Ta = 25°C Pulse test −4 −3.5 −1.2 −3.3 −0.8 −3 −2.8 −0.4 VGS = −2.5 V VGS = −2.5 V 0 0 −0.2 −0.4 −0.6 Drain-source voltage −0.8 VDS 0 0 −1.0 (V) −2 −4 Drain-source voltage ID – VGS (V) 25 Tc = −55°C 100 −1.2 −0.8 −0.4 −1 −2 −3 Gate-source voltage −4 VGS −1.6 −1.2 ID = −2 A −0.8 −1.5 −1.0 −0.4 0 0 −5 (V) −0.5 −4 −8 −16 VGS −20 (V) RDS (ON) – ID 10 Common source VDS = −10 V Pulse test 3 Tc = −55°C 25 100 1 0.5 0.3 −0.1 −12 Gate-source voltage Drain-source ON resistance RDS (ON) (Ω) Forward transfer admittance ⎪Yfs⎪ (S) 5 (V) Common source Ta = 25°C Pulse test |Yfs| – ID 10 −10 VDS – VGS Common source VDS = −10 V Pulse test 0 0 VDS −2.0 Drain-source voltage Drain current ID (A) −1.6 −8 VDS −2.0 −6 5 Common source Ta = 25°C Pulse test 3 VGS = −4 V 1 −10 0.5 −0.3 −0.5 −1 −3 −5 0.3 −0.1 −10 Drain current ID (A) −0.3 −0.5 −1 −3 −5 −10 Drain current ID (A) 3 2009-09-29 2SJ360 RDS (ON) − Ta IDR − VDS −3 ID = −2 A Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) ( Ω) Common source 2.0 Pulse test −1.5 1.6 −1.0 1.2 −0.5 ID = −2 A VGS = −4 V −1.5 0.8 −1.0 −0.5 0.4 −1 −0.5 Common source Ta = 25°C Pulse test −10 −5 −0.3 −3 −0.1 −0.05 −0.03 −1 0 VGS = −10 V 0 −80 −40 VGS = 1 V 0 40 80 120 −0.01 0 160 0.1 0.3 0.2 Ambient temperature Ta (°C) Drain-source voltage 0.8 (V) Common source VDS = −10 V ID = −1mA Pulse test −4 300 Gate threshold voltage Vth (V) (pF) VDS 0.7 −5 500 Capacitance C 0.6 0.5 Vth − Ta Capacitance – VDS 1000 Ciss 100 50 30 0.4 Coss Common source VGS = 0 V f = 1 MHz Ta = 25°C 10 −0.1 −0.3 −3 −2 −1 Crss −1 −3 −10 Drain-source voltage −30 0 −80 −100 −40 0 40 80 120 160 Ambient temperature Ta (°C) VDS (V) PD − Ta 2.0 Drain power dissipation PD (W) ① 25.4mm×25.4mm×0.8mm 1.5 Mounted on ceramic substrate ② Single ① 1.0 0.5 0 0 ② 40 80 120 160 200 Ambient temperature Ta (°C) 4 2009-09-29 2SJ360 rth − tw 500 Transient thermal impedance rth (ch-a) 300 Single pulse Single 15 × 15 × 0.8 100 50 20 × 30 × 0.8 30 Mounted on ceramic substrate 40mm×50mm×0.8mm 10 5 3 1 1m 10 m 100 m 1 Pulse width 10 tw 100 1000 (s) SAFE OPERATING AREA −10 −5 ID max (pulsed) * 1 ms * (A) −1 Drain current ID −3 −0.5 −0.3 ID max (continuous) 10 ms * DC operation Ta = 25°C −0.1 −0.05 −0.03 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated −0.01 linearly with increase in temperature. −0.005 −0.1 −1 −0.3 −3 Drain-source voltage VDSS max −10 −30 −100 VDS (V) 5 2009-09-29 2SJ360 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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