2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications z Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) z High forward transfer admittance: |Yfs| = 110 S (typ.) z Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) z Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 70 Pulse (Note 1) IDP 210 JEDEC ― Drain power dissipation (Tc = 25°C) PD 125 W JEITA ― Single pulse avalanche energy (Note 2) EAS 273 mJ TOSHIBA Avalanche current IAR 70 A Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to150 °C DC Drain current A 2-9F1C Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Note 1: Circuit Configuration Symbol Max Unit Rth (ch-c) 1.0 °C/W Ensure that the channel temperature does not exceed 150°C. 4 1 Note 2: VDD = 25 V, Tch = 25°C (initial), L = 40 μH, IAR = 70 A, RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 2009-09-29 2SK3397 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 15 ⎯ ⎯ Vth VDS = 10 V, ID = 1 mA 1.5 ⎯ 3.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 35 A ⎯ 4.0 6.0 mΩ Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 35 A 55 110 ⎯ S Input capacitance Ciss ⎯ 5000 ⎯ Reverse transfer capacitance Crss ⎯ 550 ⎯ Output capacitance Coss ⎯ 1000 ⎯ ⎯ 8.0 ⎯ ⎯ 25 ⎯ ⎯ 48 ⎯ ⎯ 180 ⎯ ⎯ 110 ⎯ ⎯ 87 ⎯ ⎯ 23 ⎯ Test Condition Min Typ. Max Unit 70 A Drain-source breakdown voltage Gate threshold voltage Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz ID = 35 A 10 V VGS tr 0V ton Switching time Fall time tf Turn-OFF time RL = 0.43 Ω 4.7 Ω Turn-ON time Duty < = 1%, tw = 10 μs toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VOUT VDD ∼ − 15 V VDD ∼ − 24 V, VGS = 10 V, ID = 70 A V pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ IDRP ⎯ ⎯ ⎯ 210 A Forward voltage (diode) VDSF IDR = 70 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 70 A, VGS = 0 V, ⎯ 40 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 30 A/μs ⎯ 40 ⎯ nC Pulse drain reverse current (Note 1) Marking K3397 Note 4: A line under a Lot No. identifies the indication of product Labels. Part No. (or abbreviation code) Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Lot No. Note 4 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK3397 ID – VDS 10 3.5 20 60 40 0.6 Drain-source voltage 0.8 VDS 3.5 3.25 0 1.0 0 (V) 1 2 ID – VGS (V) VDS Drain-source voltage ID (A) Drain current 80 Tc = −55°C 100 25 40 4 VDS 5 (V) VDS – VGS 1.2 Common source VDS = 10 V Pulse Test 60 3 Drain-source voltage 120 100 Common source Tc = 25°C Pulse Test 3.75 VGS = 3 V VGS = 3V 0.4 4.5 20 3.25 0 5 (A) 5 ID (A) ID Drain current 3.75 0.2 6 80 8 6 0 4 10 4 8 40 Common source Tc = 25°C Pulse Test 4.5 80 60 ID – VDS 100 Drain current 100 20 Common source Tc = 25℃ Pulse Test 1.0 0.8 0.6 0.4 ID = 70 A 35 0.2 15 0 0 1 2 3 Gate-source voltage 4 5 VGS (V) 0 6 0 2 4 |Yfs| – ID Drain-source ON resistance RDS (ON) (mΩ) Forward transfer admittance ⎪Yfs⎪ (S) Tc = −55°C 100 100 25 10 Common source VDS = 10 V Pulse Test 1 10 8 VGS 10 12 (V) RDS (ON) – ID 100 1000 1 6 Gate-source voltage 100 Common source Tc = 25°C Pulse Test 10 VGS = 10,15V 1 1 1000 Drain current ID (A) 10 100 Drain current ID (A) 3 2009-09-29 2SK3397 RDS (ON) − Tc 20 Drain reverse current IDR (A) Common source VGS = 10 V Pulse Test 16 Drain-source ON resistance RDS (ON) (mΩ) IDR − VDS 1000 12 8 70 ID = 15,35A 4 5 10 100 3 VGS = 0, −1 V 10 Common source Tc = 25°C Pulse Test 1 0 −80 −40 0 40 80 120 1 160 0 −0.4 Ambient temperature Ta (°C) −0.8 −1.2 Drain-source voltage −1.6 VDS (V) Vth − Tc Capacitance – VDS 10000 5 Common source VDS = 10 V ID = 1mA Pulse Test Ciss (pF) Gate threshold voltage Vth (V) 4 Capacitance C −2.0 Coss 1000 Crss Common source VGS = 0 V 3 2 1 f = 1 MHz Tc = 25°C 100 0.1 1 10 Drain-source voltage 0 −80 100 −40 0 40 80 120 160 Ambient temperature Ta (°C) VDS (V) Dynamic input / output characteristics PD − Tc 200 25 50 100 50 0 40 80 120 160 200 Ambient temperature Ta (°C) VGS 30 15 6 VDS 20 12 VDD = 24V 10 10 5 0 40 80 120 160 VGS (V) Pulse Test 0 0 20 Tc = 25°C Gate-source voltage (V) ID = 70 A 40 VDS 150 Drain-source voltage Drain power dissipation PD (W) Common source 0 200 Total gate charge Qg (nC) 4 2009-09-29 2SK3397 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 PDM SINGLE PULSE 0.1 t T 0.05 0.01 0.01 10μ Duty = t/T Rth (ch-c) = 1.0°C/W 0.02 100μ 1m 10m Pulse width 1 100m 10 tw (s) EAS – Tch SAFE OPERATING AREA 1000 EAS (mJ) 500 ID max (pulse) * 100 μs * ID max (continuous) 100 400 Avalanche energy Drain current ID (A) 300 1 ms * DC OPEATION Tc = 25°C 10 1 100 0 25 ※ Single pulse 50 75 100 125 Channel temperature (initial) Ta=25℃ Curves must be derated linearly with increase in temperature. 0. 1 0. 1 200 VDSS max 1 Drain-source voltage 10 BVDSS 15 V 100 IAR −15 V VDS (V) VDD Test circuit RG=25 Ω VDD = 25 V, L = 40μH 5 150 Tch (°C) VDS Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − ⎝ VDSS VDD ⎠ 2009-09-29 2SK3397 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-09-29