Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1061 DESCRIPTION ・With TO-3PN package ・Complement to type 2SC2485 ・High collector power dissipation APPLICATIONS ・High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -6 A ICM Collector current-peak -10 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SA1061 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A -2.0 V VBE Base-emitter on voltage IC=-4A;VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-100V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-0.2A ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 40 hFE-3 DC current gain IC=-4A ; VCE=-5V 20 Transition frequency IC=-0.5A ; VCE=-5V fT CONDITIONS hFE-2 Classifications R Q P 40-80 60-120 100-200 JMnic MIN TYP. MAX -100 UNIT V 200 20 MHz Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1061 PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10mm) JMnic