JMnic Product Specification 2SC1827 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA769 ・Collector current :IC=4A ・Collector dissipation :PC=30W@TC=25℃ APPLICATIONS ・For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 4 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification 2SC1827 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ;IE=0 80 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=80V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=4V Transition frequency IC=0.5A ; VCE=2V fT CONDITIONS 2 MIN TYP. 60 MAX UNIT 240 8 MHz JMnic Product Specification 2SC1827 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3