Inchange Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High voltage ,high speed ・Built-in damper diode ・Wide area of safe operation APPLICATIONS ・For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL EM S E NG D N O IC VALUE UNIT 1500 V 5 V Collector current 4 A ICM Collector current-peak 15 A IBM Base current 3.5 A PC Collector power dissipation 70 W Tj Junction temperature 130 ℃ Tstg Storage temperature -55~130 ℃ VCBO VEBO IC PARAMETER R O T UC CONDITIONS Collector-base voltage Open emitter Emitter-base voltage Open collector A H C IN TC=25℃ Inchange Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=500mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=3A ;IB=1A 1.5 V VCB=750V; IE=0 50 μA VCB=1500V; IE=0 1 mA ICBO DC current gain VF Diode forward voltage IC=3A ; VCE=10V 体 导 半 固电 Switching times tf V Collector cut-off current hFE tstg 5 UNIT EM S E NG CHA Storage time IN IC=-4A 5 15 R O T UC D N O IC 4 2.2 V 9 μs 0.8 μs IC=3A IBend=1A;LLeak=5μH Fall time 2 Inchange Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3