Inchange Semiconductor Product Specification 2SD1479 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ,high reliability ・High speed switching ・Wide area of safe operation APPLICATIONS ・For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 2.5 A ICM Collector current (Pulse) 6 A IBM Base current (Pulse) 2.5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1479 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=1mA; IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=1A 5.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=1A 1.5 V VCB=750V; IE=0 50 μA VCB=1500V; IE=0 1.0 mA 50 μA ICBO V Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=2A ; VCE=5V ts 5 UNIT Storage time 2 5 9.0 μs 1.0 μs IC=2.5A IBend=1.1A,LB=10μH tf Fall time 2 Inchange Semiconductor Product Specification 2SD1479 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3