Inchange Semiconductor Product Specification 2SC4111 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output application PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 22 A IB Base current 3.5 A PC Collector power dissipation Ta=25℃ 3.5 TC=25℃ 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4111 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Eemitter-base breakdown voltage IE=1mA ;IC=0 VCEsat Collector-emitter saturation voltage IC=7A ;IB=2.5A 5.0 V VBEsat Base-emitter saturation voltage IC=7A ;IB=2.5A 1.5 V VCB=750V; IE=0 10 μA VCB=1500V; IE=0 1 mA ICBO 7 UNIT Collector cut-off current hFE-1 DC current gain IC=1A ; VCE=5V 5 hFE-2 DC current gain IC=7A ; VCE=5V 3 Transition frequency IC=1A ; VCE=10V;f=0.5MHz fT V 8 2 MHz Switching times ts Storage time tf Fall time 12 μs 0.6 μs IC=6A ;IB1=-IB2=1.7A LLeak=5μH 2 Inchange Semiconductor Product Specification 2SC4111 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 Inchange Semiconductor Product Specification 2SC4111 Silicon NPN Power Transistors 4