ISC 2SC4111

Inchange Semiconductor
Product Specification
2SC4111
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PL package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For horizontal deflection output application
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
10
A
ICM
Collector current-peak
22
A
IB
Base current
3.5
A
PC
Collector power dissipation
Ta=25℃
3.5
TC=25℃
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC4111
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Eemitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=7A ;IB=2.5A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=7A ;IB=2.5A
1.5
V
VCB=750V; IE=0
10
μA
VCB=1500V; IE=0
1
mA
ICBO
7
UNIT
Collector cut-off current
hFE-1
DC current gain
IC=1A ; VCE=5V
5
hFE-2
DC current gain
IC=7A ; VCE=5V
3
Transition frequency
IC=1A ; VCE=10V;f=0.5MHz
fT
V
8
2
MHz
Switching times
ts
Storage time
tf
Fall time
12
μs
0.6
μs
IC=6A ;IB1=-IB2=1.7A
LLeak=5μH
2
Inchange Semiconductor
Product Specification
2SC4111
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
Inchange Semiconductor
Product Specification
2SC4111
Silicon NPN Power Transistors
4