ISC 2SD2454

Inchange Semiconductor
Product Specification
2SD2454
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3P(H)IS package
・High voltage ;high speed
・Low saturation voltage
・Built-in damper diode
APPLICATIONS
・Horizontal deflection output for color TV
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1700
V
VCEO
Collector-emitter voltage
Open base
600
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
7
A
ICM
Collector current-peak
14
A
IB
Base current
3.5
A
PC
Total power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD2454
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
Base-emitter breakdown voltage
IE=400mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=6A; IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
ICBO
Collector cut-off current
VCB=1700V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
66
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=6A ; VCE=5V
5
VF
Diode forward voltage
IF=7A
1.5
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
250
pF
Transition frequency
IC=0.1A ; VCE=10V
3
MHz
fT
5
UNIT
V
0.9
1
5
V
1.5
V
1.0
mA
200
μA
13
8
2.0
Switching times : inductive load
ts
Storage time
tf
Fall time
9
12
μs
0.3
0.7
μs
ICP=6A;IB1=1A
fH =15.75kHz
2
Inchange Semiconductor
Product Specification
2SD2454
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
Inchange Semiconductor
Product Specification
2SD2454
Silicon NPN Power Transistors
4