Power Transistors www.jmnic.com 2SD1588 Silicon NPN Transistors Features BCE ﹒With TO-220Fa package ﹒Low frequency power amplifiers and low-speed switching ﹒Complement to type 2SB1097 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 60 V VEBO Emitter to base voltage 7 V IC Collector current 7 A ICP Collector current-Pluse 15 A PC Collector power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TO-220Fa Electrical Characteristics Tc=25 SYMBOL ICBO PARAMETER Collector cut-off current CONDITIONS VCB=80V, IE=0; IEBO Emitter ut-off current VEB=5V, IC=0 VCBO Collector-base breakdown voltage VCEO Collector-emitter sustaining voltage VEBO Emitter-base breakdown voltage VCE(sat-1) Collector-emitter saturation voltages VCE(sat-2) Collector-emitter saturation voltages IC=30mA; IB=0 MIN Forward current transfer ratio IC=3A; VCE=1V 40 hFE-2 Forward current transfer ratio IC=5A; VCE=1V 20 VBE(sat-1) Base-emitter saturation voltages IC=5A; IB=0.5A VBE(sat-2) Base-emitter saturation voltages L 60-120 K 100-200 JMnic UNIT uA 10 uA V 0.5 hFE-1 M 40-80 MAX 10 60 IC=5A; IB=0.5A hFE-1 Classifications TYP V 200 1.5 V