Power Transistors www.jmnic.com 2SC4278 Silicon NPN Transistors B C E Features With TO-247 package Complement to type 2SA1633 Absolute Maximum Ratings Tc=25 SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER 150 V VCEO Collector to emitter voltage 150 V VCER Emitter to base voltage VEB Emitter to base voltage 5 V IB Base Current IC Collector current-Continuous 10 A PD Total Power Dissipation@TC=25 Derate above 25 Junction temperature 100 W W/ Tj Tstg Storage temperature 150 TO-247 -65~150 Electrical Characteristics Tc=25 SYMBOL VCEO(SUS) PARAMETER CONDITIONS MIN MAX UNIT Collector-Emitter Sustaining Voltage IC=30mA; IB=0 150 VCBO Collector-Base Voltage IC=1mA; IE=0 150 ICEO Collector Cutoff Current VCE=150V; IB=0 500 uA ICBO Collector Cutoff Current VCB=150V; IE=0 100 uA IEBO Emitter Cutoff Current VEBO Emitter Cutoff Current IE=5mA; IC=0 VCE(sat-1) Collector-emitter saturation voltages IC=5A; IB=0.5A VCE(sat-2) Collector-emitter saturation voltages VCE(sat-3) Collector-emitter saturation voltages VCE(sat-4) Collector-emitter saturation voltages hFE-1 Forward current transfer ratio hFE-2 Forward current transfer ratio VBE(sat) Base-emitter Saturation voltages fT Current Gain-Bandwidth Product IC=1A; VCE=5V V V 5 V 2.0 60 320 V