ETC 2N5609

INCHANGE
Power Transistors
2N5609
Silicon PNP Transistors
Features
With TO-66 package
Designed for use as high-frequency drivers in audio amplifier
Absolute Maximum Ratings Tc=25
SYMBOL
PARAMETER
RATING
UNIT
80
V
Collector to emitter voltage
80
V
Emitter to base voltage
5.0
V
VCBO
Collector to base voltage
VCEO
VEBO
ICP
Peak collector current
IC
Collector current
5.0
A
PC
Collector power dissipation
25
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
A
TO-66
Electrical Characteristics Tc=25
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
ICBO
Collector-base cut-off current
VCB =80V;IE=0
10
A
IEBO
Emitter-base cut-off current
VEB =5V, IC=0
10
A
ICEO
Collector-emitter cut-off current
VCBO
Collector-base breakdown voltage
V(BR)CEO
VEBO
Collector-emitter breakdown voltage
IC=10mA,IB=0
80
V
Emitter-base breakdown voltage
VCEsat-1
Collector-emitter saturation voltages
VCEsat-2
Collector-emitter saturation voltages
VCEsat-3
Collector-emitter saturation voltages
VCEsat-4
Collector-emitter saturation voltages
hFE-1
Forward current transfer ratio
hFE-2
Forward current transfer ratio
hFE-3
Forward current transfer ratio
hFE-4
Forward current transfer ratio
VBE(sat)1
Base-emitter saturation voltages
VBE(sat)2
Base-emitter saturation voltages
VBE(sat)3
Base-emitter saturation voltages
fT
Transition frequency at f = 1MHz
tf
Fall time
ts
Tum-off storage time
IC =1A; IB =0.1A
IC=2.5A,VCE=5V
IC=1A,VCE=2V
0.5
70
V
200
1.0
V