INCHANGE Power Transistors 2N5609 Silicon PNP Transistors Features With TO-66 package Designed for use as high-frequency drivers in audio amplifier Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT 80 V Collector to emitter voltage 80 V Emitter to base voltage 5.0 V VCBO Collector to base voltage VCEO VEBO ICP Peak collector current IC Collector current 5.0 A PC Collector power dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 A TO-66 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT ICBO Collector-base cut-off current VCB =80V;IE=0 10 A IEBO Emitter-base cut-off current VEB =5V, IC=0 10 A ICEO Collector-emitter cut-off current VCBO Collector-base breakdown voltage V(BR)CEO VEBO Collector-emitter breakdown voltage IC=10mA,IB=0 80 V Emitter-base breakdown voltage VCEsat-1 Collector-emitter saturation voltages VCEsat-2 Collector-emitter saturation voltages VCEsat-3 Collector-emitter saturation voltages VCEsat-4 Collector-emitter saturation voltages hFE-1 Forward current transfer ratio hFE-2 Forward current transfer ratio hFE-3 Forward current transfer ratio hFE-4 Forward current transfer ratio VBE(sat)1 Base-emitter saturation voltages VBE(sat)2 Base-emitter saturation voltages VBE(sat)3 Base-emitter saturation voltages fT Transition frequency at f = 1MHz tf Fall time ts Tum-off storage time IC =1A; IB =0.1A IC=2.5A,VCE=5V IC=1A,VCE=2V 0.5 70 V 200 1.0 V