Product Specification www.jmnic.com 2SD1026 Silicon NPN Transistors Features B C E ﹒With TO-247 package ﹒Darlington transistor Absolute Maximum Ratings Tc=25℃ SYMBOL PARAMETER RATING UNIT V VCBO Collector to base voltage 100 VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TO-247 Electrical Characteristics Tc=25℃ SYMBOL ICBO PARAMETER Collector cut-off current CONDITIONS VCB=100V; IE=0 ICEO Collector breakdown voltage VCE=100V; IB=0 VEB=7V; IC=0 IEBO Emitter cut-off current VCBO Collector-base breakdown voltage VCEO Collector-emitter breakdown voltage VEBO Emitter-base breakdown voltage VCE(sat-1) Collector-emitter saturation voltages VCE(sat-2) Collector-emitter saturation voltages hFE-1 Forward current transfer ratio hFE-2 Forward current transfer ratio VBE(sat-1) Base-emitter saturation voltages VBE(sat-2) Base-emitter saturation voltages fT Transition frepuency at f=1MHz IC=30mA; IB=0 MIN TYP JMnic 0.1 mA 5 mA V 1.5 1500 V 30000 IC=10A; IB=20mA IC=1.5A; VCE=10V UNIT mA 100 IC=10A; IB=20mA IC=10A; VCE=3V MAX 0.1 2.0 20 V MHz