JMNIC 2SD1026

Product Specification
www.jmnic.com
2SD1026
Silicon NPN Transistors
Features
B C E
﹒With TO-247 package
﹒Darlington transistor
Absolute Maximum Ratings Tc=25℃
SYMBOL
PARAMETER
RATING
UNIT
V
VCBO
Collector to base voltage
100
VCEO
Collector to emitter voltage
100
V
VEBO
Emitter to base voltage
7
V
IB
Base current
1
A
IC
Collector current
15
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TO-247
Electrical Characteristics Tc=25℃
SYMBOL
ICBO
PARAMETER
Collector cut-off current
CONDITIONS
VCB=100V; IE=0
ICEO
Collector breakdown voltage
VCE=100V; IB=0
VEB=7V; IC=0
IEBO
Emitter cut-off current
VCBO
Collector-base breakdown voltage
VCEO
Collector-emitter breakdown voltage
VEBO
Emitter-base breakdown voltage
VCE(sat-1)
Collector-emitter saturation voltages
VCE(sat-2)
Collector-emitter saturation voltages
hFE-1
Forward current transfer ratio
hFE-2
Forward current transfer ratio
VBE(sat-1)
Base-emitter saturation voltages
VBE(sat-2)
Base-emitter saturation voltages
fT
Transition frepuency at f=1MHz
IC=30mA; IB=0
MIN
TYP
JMnic
0.1
mA
5
mA
V
1.5
1500
V
30000
IC=10A; IB=20mA
IC=1.5A; VCE=10V
UNIT
mA
100
IC=10A; IB=20mA
IC=10A; VCE=3V
MAX
0.1
2.0
20
V
MHz