Power Transistors www.jmnic.com 2SA633 Silicon PNP Transistors BCE Features ï¹’With TO-202 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 30 V VCEO Collector to emitter voltage 30 V VEBO Emitter to base voltage 5.0 V IB Base collector current IC Collector current 2.0 A PC Collector power dissipation 10 W Tj Junction temperature 150 Tstg Storage temperature -55~+150 A TO-202 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT ICBO Collector-base cut-off current VCB=30V; IE=0 100 uA IEBO Emitter-base cut-off current VEB=5.0V; IC=0 100 uA ICEO Collector-emitter cut-off current VCE=30V; IB=0 0.5 mA VCBO Collector-base breakdown voltage VCEO(SUS) Collector-emitter sustaining voltage IC=20mA; IB=0 30 Emitter-base breakdown voltage IE=1mA; Ic=0 5 VCE(sat-1) Collector-emitter saturation voltages IC=1.5A; IB=0.15A VCE(sat-2) Collector-emitter saturation voltages VEBO hFE-1 Forward current transfer ratio hFE-2 Forward current transfer ratio hFE-3 Forward current transfer ratio IC=1A; VCE=5V V 1.0 80 V