KEXIN 2SB772

Transistors
SMD Type
PNP Silicon Power Transistor
2SB772
Features
Low saturation voltage.
VCE(sat)
-0.5(@ IC=-2A,IB=-0.2A)
Excellent hFE
hFE: 60 to 400 (@VCE=-2V,IC=-1A)
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
-40
V
Collector to emitter voltage
VCEO
-30
V
Emitter to base voltage
VEBO
-5
V
IC
-3
A
1.0
W
10
W
Collector current
Collector Power dissipation
TA = 25
Pc
TC = 25
Junction temperature
Storage temperature range
* PW
Tj
150
Tstg
-55 to +150
350ìS,duty cycle 2%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Collector-base breakdown voltage
VCBO
Ic=-100 A,IE=0
-40
Typ
Max
Unit
V
Collector-emitter breakdown voltage
VCEO
IC= -10 mA , IB=0
-30
V
Emitter-base breakdown voltage
VEBO
IE= -100 A
-5
V
Collector cutoff current
ICBO
VCB = -30 V, IE = 0
Emitter cutoff current
IEBO
VEB = -6V, IC = 0
DC current gain *
hFE
VCE = -2.0 V, IC = -1.0A *
IC=0
60
-1.0
A
-1.0
A
160
400
Collector saturation voltage *
VCE(sat) IC = -2A, IB = -0.2A
-0.3
-0.5
Base saturation voltage *
VBE(sat) IC = -2A, IB = -0.2A
-1.0
-2.0
Output capacitance
Cob
Transition frequency
fT
* Pulsed: PW
350
s, duty cycle
V
V
VCB = -10 V, IE = 0,f=1.0MHz
55
pF
VCE = -5.0 V, IE = -0.1A,f=10MHz
80
MHz
2%
hFE Classification
Rank
R
Q
P
E
hFE
60 120
100 200
160 320
200 400
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