Transistors SMD Type PNP Silicon Power Transistor 2SB772 Features Low saturation voltage. VCE(sat) -0.5(@ IC=-2A,IB=-0.2A) Excellent hFE hFE: 60 to 400 (@VCE=-2V,IC=-1A) Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -40 V Collector to emitter voltage VCEO -30 V Emitter to base voltage VEBO -5 V IC -3 A 1.0 W 10 W Collector current Collector Power dissipation TA = 25 Pc TC = 25 Junction temperature Storage temperature range * PW Tj 150 Tstg -55 to +150 350ìS,duty cycle 2%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector-base breakdown voltage VCBO Ic=-100 A,IE=0 -40 Typ Max Unit V Collector-emitter breakdown voltage VCEO IC= -10 mA , IB=0 -30 V Emitter-base breakdown voltage VEBO IE= -100 A -5 V Collector cutoff current ICBO VCB = -30 V, IE = 0 Emitter cutoff current IEBO VEB = -6V, IC = 0 DC current gain * hFE VCE = -2.0 V, IC = -1.0A * IC=0 60 -1.0 A -1.0 A 160 400 Collector saturation voltage * VCE(sat) IC = -2A, IB = -0.2A -0.3 -0.5 Base saturation voltage * VBE(sat) IC = -2A, IB = -0.2A -1.0 -2.0 Output capacitance Cob Transition frequency fT * Pulsed: PW 350 s, duty cycle V V VCB = -10 V, IE = 0,f=1.0MHz 55 pF VCE = -5.0 V, IE = -0.1A,f=10MHz 80 MHz 2% hFE Classification Rank R Q P E hFE 60 120 100 200 160 320 200 400 www.kexin.com.cn 1