Transistors SMD Type PNP Silicon AF Transistors KC807(BC807) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1 High current gain. 0-0.1 +0.1 0.38-0.1 Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -5 V Collector current (DC) IC -800 mA power dissipation PD 310 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector-to-base breakdown voltage VCBO IC = -10 Collector-to-emitter breakdown voltage A,VBE = 0 Min Typ Max Unit -50 V VCEO IC = -10 mA, IB = 0 -45 V Emitter-to-base breakdown voltage VEBO IE = -10 -5 V Collector cutoff current ICES VCB = -25 V, VBE= 0 Emitter cutoff current IEBO A, IC = 0 VEB = -4 V, IC = 0 IC = -100 mA, VCE = -1 V 100 IC = -300 mA, VCE = -1 V 60 -100 nA -100 nA 630 hFE DC current gain * Collector saturation voltage * VCE(sat) IC = -500 mA, IB = -50 mA -0.7 V Base emitter on voltage VBE(on) VCE=-1V,IC=300mA -1.2 V Output Capacitance Cob Transition frequency fT * Pulsed: PW 350 ìs, duty cycle VCB=-10V,f=1MHz IC = -10 mA, VCE = -5 V, f = 50 MHz 12 100 pF MHz 2% Marking NO. Marking hFE KC807-16 9FA 100 250 KC807-25 9FB 160 400 KC807-40 9FC 250 630 www.kexin.com.cn 1