Transistors SMD Type Low VCE(sat) Transistor 2SB1424 Features Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics. PNP silicon transistor Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -3 A ICP * -5 A W Collector current Collector dissipation PC 0.5 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Single pulse Pw=10ms. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltae VCBO IC= -50ìA -20 V Collector-emitter breakdown voltage VCEO IC= -1mA -20 V Emitter-base breakdown voltage VEBO IE= -50ìA -6 V Collector cutoff current IcBO VCB= -20V -0.1 A Emitter cutoff current IEBO VEB= -5V -0.1 A DC current gain hFE VCE=-2V, IC= -0.1A 120 390 VCE(sat) IC/IB= -2A/ -0.1A Collector-emitter saturation voltage Output capacitance Cob Transition frequency fT -0.5 V VCB= -10V, IE=0A, f=1MHz 35 pF VCE= -2V, IE=0.5A, f=100MHz 240 MHz hFE Classification Marking AEQ AER Rank Q R hFE 120 270 180 390 www.kexin.com.cn 1