KEXIN KC808

Transistors
SMD Type
PNP Silicon AF Transistors
KC808(BC808)
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
High current gain.
1
0.55
High collector current.
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Low collector-emitter saturation voltage.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-30
V
Collector-emitter voltage
VCEO
-25
V
Emitter-base voltage
VEBO
-5
V
Collector current (DC)
IC
-800
mA
power dissipation
PD
310
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-to-baser breakdown voltage
VCBO
IC = -10
Collector-to-emitter breakdown voltage
VCEO
Min
Typ
Max
Unit
-30
V
IC = -10 mA, IB = 0
-25
V
VEBO
IE = -10
-5
V
Collector cutoff current
ICES
VCB = -25 V, VBE= 0
-100
nA
Emitter cutoff current
IEBO
VEB = -4 V, IC = 0
-100
nA
DC current gain *
hFE
Emitter-to-base breakdown voltage
A,VBE = 0
A, IC = 0
IC = -100 mA, VCE = -1 V
100
IC = -300 mA, VCE = -1 V
60
630
Collector saturation voltage *
VCE(sat) IC = -500 mA, IB = -50 mA
-0.7
V
Base emitter on voltage
VBE(on) VCE=-1V,IC=300mA
-1.2
V
Output Capacitance
Cob
Transition frequency
fT
* Pulsed: PW
350 ìs, duty cycle
VCB=-10V,f=1MHz
IC = -10 mA, VCE = -5 V, f = 50 MHz
12
100
pF
MHz
2%
Marking
NO.
KC808-16
KC808-25
KC808-40
Marking
9GA
9GB
9GC
hFE
100
250
160
400
250
630
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