Transistors SMD Type Low Frequency Transistor 2SD2150 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low VCE(sat). 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 2.60 +0.1 -0.1 NPN silicon transistor. +0.1 0.80-0.1 Excellent DC current gain characteristics. +0.1 4.00-0.1 Features 1. Base 0.40 +0.1 -0.1 +0.1 3.00-0.1 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC 3 A Collector power dissipation PC 0.5 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 40 V Collector-emitter breakdown voltage BVCEO IC=1mA 20 V Emitter-base breakdown voltage 6 BVEBO IE=50ìA Collector cutoff current ICBO VCB=30V 0.1 ìA Emitter cutoff current IEBO VEB=5V 0.1 ìA 0.5 V VCE(sat) IC=2A, IB=0.1A Collector-emitter saturation voltage DC current transfer ratio hFE Output capacitance fT Transition frequency Cob VCE=2V, IC=0.1A V 0.2 180 560 VCE=2V, IE= -0.5A, f=100MHz 290 MHz VCB=10V, IE=0A, f=1MHz 25 pF hFE Classification CF Marking Rank R S hFE 180 390 270 560 www.kexin.com.cn 1